WET ETCHING DEVICE
PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etchi...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | HAYASHI HIDETAKA ASAHI KUNIHIKO |
description | PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etching tank with a transfer path. CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS6432636A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS6432636A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS6432636A3</originalsourceid><addsrcrecordid>eNrjZBAKdw1RcA1x9vD0c1dwcQ3zdHblYWBNS8wpTuWF0twMCm4gFbqpBfnxqcUFicmpeakl8V4BwWYmxkZmxmaOxkQoAQD8dB3N</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>WET ETCHING DEVICE</title><source>esp@cenet</source><creator>HAYASHI HIDETAKA ; ASAHI KUNIHIKO</creator><creatorcontrib>HAYASHI HIDETAKA ; ASAHI KUNIHIKO</creatorcontrib><description>PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etching tank with a transfer path. CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890202&DB=EPODOC&CC=JP&NR=S6432636A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19890202&DB=EPODOC&CC=JP&NR=S6432636A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HAYASHI HIDETAKA</creatorcontrib><creatorcontrib>ASAHI KUNIHIKO</creatorcontrib><title>WET ETCHING DEVICE</title><description>PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etching tank with a transfer path. CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAKdw1RcA1x9vD0c1dwcQ3zdHblYWBNS8wpTuWF0twMCm4gFbqpBfnxqcUFicmpeakl8V4BwWYmxkZmxmaOxkQoAQD8dB3N</recordid><startdate>19890202</startdate><enddate>19890202</enddate><creator>HAYASHI HIDETAKA</creator><creator>ASAHI KUNIHIKO</creator><scope>EVB</scope></search><sort><creationdate>19890202</creationdate><title>WET ETCHING DEVICE</title><author>HAYASHI HIDETAKA ; ASAHI KUNIHIKO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6432636A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1989</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HAYASHI HIDETAKA</creatorcontrib><creatorcontrib>ASAHI KUNIHIKO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HAYASHI HIDETAKA</au><au>ASAHI KUNIHIKO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>WET ETCHING DEVICE</title><date>1989-02-02</date><risdate>1989</risdate><abstract>PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etching tank with a transfer path. CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_JPS6432636A |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
title | WET ETCHING DEVICE |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T06%3A40%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HAYASHI%20HIDETAKA&rft.date=1989-02-02&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS6432636A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |