WET ETCHING DEVICE

PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etchi...

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Hauptverfasser: HAYASHI HIDETAKA, ASAHI KUNIHIKO
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creator HAYASHI HIDETAKA
ASAHI KUNIHIKO
description PURPOSE:To prevent the adhesion of particles onto a wafer, and to obviate cracks by installing a parting plate separating an upper section in an etching tank into an etching section and an extracting section to the upper section in the etching tank and openly providing the lower section of the etching tank with a transfer path. CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented.
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CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. 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CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. 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CONSTITUTION:An upper section in an etching tank is partitioned by a parting plate 9 to form an etching section 8 and an extracting section 9. When the etching of a wafer 2 is completed and a cassette 1 is detached from a hanger 11, the cassette 1 slides down in a path 10, and is transferred to the extracting section 9 from the etching section 8. The cassette 1 is mounted at the nose of the hanger 1, and the wafer 2 is extracted from the inside of an etchant in the extract ing section 9 together with the cassette 1. Since there is no particle around the level of the etchant in the extracting section 9, no particle 5 adheres on the surface of the slicing of the wafer 2. Accordingly, cracks are prevented.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
title WET ETCHING DEVICE
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