SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To improve the reliability of a protecting circuit by composing a MISFET of diode mode at its gate insulating film of the same insulating film as an interlayer insulating film, connecting its one semiconductor region and a gate electrode to wirings extended from an external electrode, and co...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KUBODERA MASAAKI, TACHIMORI HIROSHI, YAMAMOTO AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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