REFINING METHOD FOR INDIUM

PURPOSE:To easily remove Si as impurity in In, by heating In containing Si as impurity in an oxidizing atmosphere to oxidize a part of In into In2O3 and also by heating the above in a vacuum atmosphere so as to oxidize impurity Si into volatile SiO by In2O3. CONSTITUTION:A vessel 1 composed of high-...

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Hauptverfasser: KYONO IWAO, ONO RYOICHI
Format: Patent
Sprache:eng
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