ION-IMPLANTATION THIN FILM FORMING DEVICE

PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO TADASHI, OHATA KOKICHI, TAKAHASHI TOMIO, HASHIMOTO ISAO
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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