ION-IMPLANTATION THIN FILM FORMING DEVICE
PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | SATO TADASHI OHATA KOKICHI TAKAHASHI TOMIO HASHIMOTO ISAO |
| description | PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in a target housing chamber 18, and an ion is implanted by the beam outputted from an ion source 15. An ion is further implanted in the succeeding target 20. An ion is implanted in the target 20 from the ion source 2 for mass separation, and the ion is further implanted in the vapor-deposited thin metal film formed by an electron beam deposition device 21. The ion beam from an ion source 3 is concentrated on a sputtering target 4, and a thin film having an excellent composition is supplied to the target 20 by ion-beam sputtering. A gate valve 5 is used, as required, to separate the targets 17 and 20 under vacuum, the ion is implanted by jointly using the ion source 15 to the target 20 and the ion source 2 or the electron-beam deposition device 21, or a thin film is formed. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS63317672A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS63317672A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS63317672A3</originalsourceid><addsrcrecordid>eNrjZND09PfT9fQN8HH0C3EMAXIUQjw8_RTcPH18Fdz8g3w9_dwVXFzDPJ1deRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvFdAsJmxsaG5mbmRozExagA0-iSu</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ION-IMPLANTATION THIN FILM FORMING DEVICE</title><source>esp@cenet</source><creator>SATO TADASHI ; OHATA KOKICHI ; TAKAHASHI TOMIO ; HASHIMOTO ISAO</creator><creatorcontrib>SATO TADASHI ; OHATA KOKICHI ; TAKAHASHI TOMIO ; HASHIMOTO ISAO</creatorcontrib><description>PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in a target housing chamber 18, and an ion is implanted by the beam outputted from an ion source 15. An ion is further implanted in the succeeding target 20. An ion is implanted in the target 20 from the ion source 2 for mass separation, and the ion is further implanted in the vapor-deposited thin metal film formed by an electron beam deposition device 21. The ion beam from an ion source 3 is concentrated on a sputtering target 4, and a thin film having an excellent composition is supplied to the target 20 by ion-beam sputtering. A gate valve 5 is used, as required, to separate the targets 17 and 20 under vacuum, the ion is implanted by jointly using the ion source 15 to the target 20 and the ion source 2 or the electron-beam deposition device 21, or a thin film is formed.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881226&DB=EPODOC&CC=JP&NR=S63317672A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881226&DB=EPODOC&CC=JP&NR=S63317672A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SATO TADASHI</creatorcontrib><creatorcontrib>OHATA KOKICHI</creatorcontrib><creatorcontrib>TAKAHASHI TOMIO</creatorcontrib><creatorcontrib>HASHIMOTO ISAO</creatorcontrib><title>ION-IMPLANTATION THIN FILM FORMING DEVICE</title><description>PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in a target housing chamber 18, and an ion is implanted by the beam outputted from an ion source 15. An ion is further implanted in the succeeding target 20. An ion is implanted in the target 20 from the ion source 2 for mass separation, and the ion is further implanted in the vapor-deposited thin metal film formed by an electron beam deposition device 21. The ion beam from an ion source 3 is concentrated on a sputtering target 4, and a thin film having an excellent composition is supplied to the target 20 by ion-beam sputtering. A gate valve 5 is used, as required, to separate the targets 17 and 20 under vacuum, the ion is implanted by jointly using the ion source 15 to the target 20 and the ion source 2 or the electron-beam deposition device 21, or a thin film is formed.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND09PfT9fQN8HH0C3EMAXIUQjw8_RTcPH18Fdz8g3w9_dwVXFzDPJ1deRhY0xJzilN5oTQ3g6Kba4izh25qQX58anFBYnJqXmpJvFdAsJmxsaG5mbmRozExagA0-iSu</recordid><startdate>19881226</startdate><enddate>19881226</enddate><creator>SATO TADASHI</creator><creator>OHATA KOKICHI</creator><creator>TAKAHASHI TOMIO</creator><creator>HASHIMOTO ISAO</creator><scope>EVB</scope></search><sort><creationdate>19881226</creationdate><title>ION-IMPLANTATION THIN FILM FORMING DEVICE</title><author>SATO TADASHI ; OHATA KOKICHI ; TAKAHASHI TOMIO ; HASHIMOTO ISAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS63317672A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>SATO TADASHI</creatorcontrib><creatorcontrib>OHATA KOKICHI</creatorcontrib><creatorcontrib>TAKAHASHI TOMIO</creatorcontrib><creatorcontrib>HASHIMOTO ISAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATO TADASHI</au><au>OHATA KOKICHI</au><au>TAKAHASHI TOMIO</au><au>HASHIMOTO ISAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ION-IMPLANTATION THIN FILM FORMING DEVICE</title><date>1988-12-26</date><risdate>1988</risdate><abstract>PURPOSE:To form a thin film by ion implantation with high efficiency by providing plural targets to plural ion sources, and independently using the plural ion sources in the discrete treatment of a sample. CONSTITUTION:A target 17 is provided at a part of a beam cut 19, and housed, if necessary, in a target housing chamber 18, and an ion is implanted by the beam outputted from an ion source 15. An ion is further implanted in the succeeding target 20. An ion is implanted in the target 20 from the ion source 2 for mass separation, and the ion is further implanted in the vapor-deposited thin metal film formed by an electron beam deposition device 21. The ion beam from an ion source 3 is concentrated on a sputtering target 4, and a thin film having an excellent composition is supplied to the target 20 by ion-beam sputtering. A gate valve 5 is used, as required, to separate the targets 17 and 20 under vacuum, the ion is implanted by jointly using the ion source 15 to the target 20 and the ion source 2 or the electron-beam deposition device 21, or a thin film is formed.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPS63317672A |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ION-IMPLANTATION THIN FILM FORMING DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T10%3A08%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SATO%20TADASHI&rft.date=1988-12-26&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS63317672A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |