TARGET FOR SPUTTERING
PURPOSE:To form a ferromagnetic thin film at high speed using a simple method by providing the distortion necessary for the surface and the entire internal part of a target, to be used for the sputtering, formed by a magnetic material. CONSTITUTION:A part of the magnetic flux generated by the N-pole...
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| creator | TAKADA YOSHIICHI |
| description | PURPOSE:To form a ferromagnetic thin film at high speed using a simple method by providing the distortion necessary for the surface and the entire internal part of a target, to be used for the sputtering, formed by a magnetic material. CONSTITUTION:A part of the magnetic flux generated by the N-pole of a magnet 10 passes through a packing plate 12 and a target 14, other magnetic flux passes through a target 4 and leaked to outside, and a magnetic field is formed dn the surface of the target. However, when the target 14 is made of a ferromagnetic material, the magnetic reluctance of the magnetic path in the target is decreased remarkably, and the magnetic flux is concentrated. As a result, the intensity of the magnetic field on the surface of the target is reduced. The reason of the decrease in magnetic field intensity is the high permeability of the ferromagnetic material. Accordingly, the permeability of the target is lowered by adding distortion to the target, and the magnetic reluctance is increased. Besides, it is desirable that said distribution is added to the target by the deformation in thickness of 0.5 % or more. As a result, the magnetic field of a magnetic field generating means can be concentrated on the surface of the target excellently, and the speed of film formation can be improved. |
| format | Patent |
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CONSTITUTION:A part of the magnetic flux generated by the N-pole of a magnet 10 passes through a packing plate 12 and a target 14, other magnetic flux passes through a target 4 and leaked to outside, and a magnetic field is formed dn the surface of the target. However, when the target 14 is made of a ferromagnetic material, the magnetic reluctance of the magnetic path in the target is decreased remarkably, and the magnetic flux is concentrated. As a result, the intensity of the magnetic field on the surface of the target is reduced. The reason of the decrease in magnetic field intensity is the high permeability of the ferromagnetic material. Accordingly, the permeability of the target is lowered by adding distortion to the target, and the magnetic reluctance is increased. Besides, it is desirable that said distribution is added to the target by the deformation in thickness of 0.5 % or more. As a result, the magnetic field of a magnetic field generating means can be concentrated on the surface of the target excellently, and the speed of film formation can be improved.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INDUCTANCES ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MAGNETS ; METALLURGY ; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TRANSFORMERS</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881012&DB=EPODOC&CC=JP&NR=S63244728A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881012&DB=EPODOC&CC=JP&NR=S63244728A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TAKADA YOSHIICHI</creatorcontrib><title>TARGET FOR SPUTTERING</title><description>PURPOSE:To form a ferromagnetic thin film at high speed using a simple method by providing the distortion necessary for the surface and the entire internal part of a target, to be used for the sputtering, formed by a magnetic material. CONSTITUTION:A part of the magnetic flux generated by the N-pole of a magnet 10 passes through a packing plate 12 and a target 14, other magnetic flux passes through a target 4 and leaked to outside, and a magnetic field is formed dn the surface of the target. However, when the target 14 is made of a ferromagnetic material, the magnetic reluctance of the magnetic path in the target is decreased remarkably, and the magnetic flux is concentrated. As a result, the intensity of the magnetic field on the surface of the target is reduced. The reason of the decrease in magnetic field intensity is the high permeability of the ferromagnetic material. Accordingly, the permeability of the target is lowered by adding distortion to the target, and the magnetic reluctance is increased. Besides, it is desirable that said distribution is added to the target by the deformation in thickness of 0.5 % or more. As a result, the magnetic field of a magnetic field generating means can be concentrated on the surface of the target excellently, and the speed of film formation can be improved.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INDUCTANCES</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>MAGNETS</subject><subject>METALLURGY</subject><subject>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TRANSFORMERS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANcQxydw1RcPMPUggOCA0JcQ3y9HPnYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxXgHBZsZGJibmRhaOxsSoAQCtix9f</recordid><startdate>19881012</startdate><enddate>19881012</enddate><creator>TAKADA YOSHIICHI</creator><scope>EVB</scope></search><sort><creationdate>19881012</creationdate><title>TARGET FOR SPUTTERING</title><author>TAKADA YOSHIICHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS63244728A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INDUCTANCES</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>MAGNETS</topic><topic>METALLURGY</topic><topic>SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TRANSFORMERS</topic><toplevel>online_resources</toplevel><creatorcontrib>TAKADA YOSHIICHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TAKADA YOSHIICHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TARGET FOR SPUTTERING</title><date>1988-10-12</date><risdate>1988</risdate><abstract>PURPOSE:To form a ferromagnetic thin film at high speed using a simple method by providing the distortion necessary for the surface and the entire internal part of a target, to be used for the sputtering, formed by a magnetic material. CONSTITUTION:A part of the magnetic flux generated by the N-pole of a magnet 10 passes through a packing plate 12 and a target 14, other magnetic flux passes through a target 4 and leaked to outside, and a magnetic field is formed dn the surface of the target. However, when the target 14 is made of a ferromagnetic material, the magnetic reluctance of the magnetic path in the target is decreased remarkably, and the magnetic flux is concentrated. As a result, the intensity of the magnetic field on the surface of the target is reduced. The reason of the decrease in magnetic field intensity is the high permeability of the ferromagnetic material. Accordingly, the permeability of the target is lowered by adding distortion to the target, and the magnetic reluctance is increased. Besides, it is desirable that said distribution is added to the target by the deformation in thickness of 0.5 % or more. As a result, the magnetic field of a magnetic field generating means can be concentrated on the surface of the target excellently, and the speed of film formation can be improved.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INDUCTANCES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MAGNETS METALLURGY SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSFORMERS |
| title | TARGET FOR SPUTTERING |
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