ETCHING OF GALLIUM ARSENIDE BY OPTICAL PUMPING

PURPOSE:To mirror etching of a GaAs substrate, by disposing the GaAs substrate in a reactant gas comprising Cl2, and irradiating it with light having a peak in a wavelength range that pumps the Cl2 gas optically. CONSTITUTION:After the inside of an etching chamber 1 is evacuated, a stop valve 3 is o...

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1. Verfasser:	KOTANI KOICHIRO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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