TARGET FOR SPUTTERING
PURPOSE:To enable the formation of an alloy film for electric wiring consisting of specified amts. of Mo or W and Ta and having superior electrical conductivity, workability and suitability to the formation of an oxide film by sputtering, by regulating the compsn. of a target for sputtering. CONSTIT...
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| creator | KAWAI MITSUO UMEKI TAKENORI OANA YASUHISA ISHIHARA HIDEO FUKAZAWA MIHARU |
| description | PURPOSE:To enable the formation of an alloy film for electric wiring consisting of specified amts. of Mo or W and Ta and having superior electrical conductivity, workability and suitability to the formation of an oxide film by sputtering, by regulating the compsn. of a target for sputtering. CONSTITUTION:An alloy film for electric wiring consisting of 5-70atom.% Mo or W and the balance Ta with accompanying impurities and having superior various characteristics is formed by sputtering a target consisting of 15-50atom.% Mo or W and the balance Ta with accompanying impurities. An alloy target obtd. by alloying Mo or W and Ta in a prescribed ratio by melting with electron beams, a sintered target obtd. by mixing and sintering powders of Mo or W and Ta or a composite target obtd. by combining plates of Mo or W and Ta in a prescribed area ratio is suitable for use as the target for sputtering. |
| format | Patent |
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CONSTITUTION:An alloy film for electric wiring consisting of 5-70atom.% Mo or W and the balance Ta with accompanying impurities and having superior various characteristics is formed by sputtering a target consisting of 15-50atom.% Mo or W and the balance Ta with accompanying impurities. An alloy target obtd. by alloying Mo or W and Ta in a prescribed ratio by melting with electron beams, a sintered target obtd. by mixing and sintering powders of Mo or W and Ta or a composite target obtd. by combining plates of Mo or W and Ta in a prescribed area ratio is suitable for use as the target for sputtering.</description><language>eng</language><subject>ALLOYS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; FERROUS OR NON-FERROUS ALLOYS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881006&DB=EPODOC&CC=JP&NR=S63241164A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19881006&DB=EPODOC&CC=JP&NR=S63241164A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAWAI MITSUO</creatorcontrib><creatorcontrib>UMEKI TAKENORI</creatorcontrib><creatorcontrib>OANA YASUHISA</creatorcontrib><creatorcontrib>ISHIHARA HIDEO</creatorcontrib><creatorcontrib>FUKAZAWA MIHARU</creatorcontrib><title>TARGET FOR SPUTTERING</title><description>PURPOSE:To enable the formation of an alloy film for electric wiring consisting of specified amts. of Mo or W and Ta and having superior electrical conductivity, workability and suitability to the formation of an oxide film by sputtering, by regulating the compsn. of a target for sputtering. CONSTITUTION:An alloy film for electric wiring consisting of 5-70atom.% Mo or W and the balance Ta with accompanying impurities and having superior various characteristics is formed by sputtering a target consisting of 15-50atom.% Mo or W and the balance Ta with accompanying impurities. An alloy target obtd. by alloying Mo or W and Ta in a prescribed ratio by melting with electron beams, a sintered target obtd. by mixing and sintering powders of Mo or W and Ta or a composite target obtd. by combining plates of Mo or W and Ta in a prescribed area ratio is suitable for use as the target for sputtering.</description><subject>ALLOYS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANcQxydw1RcPMPUggOCA0JcQ3y9HPnYWBNS8wpTuWF0twMim6uIc4euqkF-fGpxQWJyal5qSXxXgHBZsZGJoaGZiaOxsSoAQCr7x9N</recordid><startdate>19881006</startdate><enddate>19881006</enddate><creator>KAWAI MITSUO</creator><creator>UMEKI TAKENORI</creator><creator>OANA YASUHISA</creator><creator>ISHIHARA HIDEO</creator><creator>FUKAZAWA MIHARU</creator><scope>EVB</scope></search><sort><creationdate>19881006</creationdate><title>TARGET FOR SPUTTERING</title><author>KAWAI MITSUO ; UMEKI TAKENORI ; OANA YASUHISA ; ISHIHARA HIDEO ; FUKAZAWA MIHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS63241164A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>ALLOYS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>KAWAI MITSUO</creatorcontrib><creatorcontrib>UMEKI TAKENORI</creatorcontrib><creatorcontrib>OANA YASUHISA</creatorcontrib><creatorcontrib>ISHIHARA HIDEO</creatorcontrib><creatorcontrib>FUKAZAWA MIHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAWAI MITSUO</au><au>UMEKI TAKENORI</au><au>OANA YASUHISA</au><au>ISHIHARA HIDEO</au><au>FUKAZAWA MIHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TARGET FOR SPUTTERING</title><date>1988-10-06</date><risdate>1988</risdate><abstract>PURPOSE:To enable the formation of an alloy film for electric wiring consisting of specified amts. of Mo or W and Ta and having superior electrical conductivity, workability and suitability to the formation of an oxide film by sputtering, by regulating the compsn. of a target for sputtering. CONSTITUTION:An alloy film for electric wiring consisting of 5-70atom.% Mo or W and the balance Ta with accompanying impurities and having superior various characteristics is formed by sputtering a target consisting of 15-50atom.% Mo or W and the balance Ta with accompanying impurities. An alloy target obtd. by alloying Mo or W and Ta in a prescribed ratio by melting with electron beams, a sintered target obtd. by mixing and sintering powders of Mo or W and Ta or a composite target obtd. by combining plates of Mo or W and Ta in a prescribed area ratio is suitable for use as the target for sputtering.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL FERROUS OR NON-FERROUS ALLOYS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | TARGET FOR SPUTTERING |
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