MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD

MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD

PURPOSE:To remove the Barkhausen noise occurring in irregular magnetic wall movement and to reduce noises by minimizing the influence of the diamagnetizing fields in respective MREs and forming the effective working region parts of the MREs into single magnetic domain structure. CONSTITUTION:The mag...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: AOI TAKAHISA
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator AOI TAKAHISA
description PURPOSE:To remove the Barkhausen noise occurring in irregular magnetic wall movement and to reduce noises by minimizing the influence of the diamagnetizing fields in respective MREs and forming the effective working region parts of the MREs into single magnetic domain structure. CONSTITUTION:The magneto-resistance element (MRE) 20, 21 are juxtaposed in extreme proximity to each other in the transverse direction F of tracks via insulating layers on a substrate 19. The MREs 20, 21 respectively have very small spacings 22, 23 widths delta1, delta2 and are patterned to a closed magnetic path of a folded type. Electrodes are formed to the respective MREs 20, 21 in such a manner that only the resistance changes in the respective central working regions can be detected. The MRE 20 has the electrodes 24, 25 and the MRE 21 has the electrodes 25, 26. The electrode 25 is a common electrode across the MREs 20, 21. The effective parts of the MREs are made into the single magnetic domain structure without being limited by the track width, track pitch, etc., by which the generation of the Barkhausen noise eliminated and the lower noises are attained.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS63224017A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS63224017A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS63224017A3</originalsourceid><addsrcrecordid>eNrjZND3dXT3cw3x1w1yDfYMDnH0c3ZVCIkMABIenn4Kbp4-vgoQFZ7OCh6uji48DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSTeKyDYzNjIyMTA0NzRmBg1AAUwJiA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD</title><source>esp@cenet</source><creator>AOI TAKAHISA</creator><creatorcontrib>AOI TAKAHISA</creatorcontrib><description>PURPOSE:To remove the Barkhausen noise occurring in irregular magnetic wall movement and to reduce noises by minimizing the influence of the diamagnetizing fields in respective MREs and forming the effective working region parts of the MREs into single magnetic domain structure. CONSTITUTION:The magneto-resistance element (MRE) 20, 21 are juxtaposed in extreme proximity to each other in the transverse direction F of tracks via insulating layers on a substrate 19. The MREs 20, 21 respectively have very small spacings 22, 23 widths delta1, delta2 and are patterned to a closed magnetic path of a folded type. Electrodes are formed to the respective MREs 20, 21 in such a manner that only the resistance changes in the respective central working regions can be detected. The MRE 20 has the electrodes 24, 25 and the MRE 21 has the electrodes 25, 26. The electrode 25 is a common electrode across the MREs 20, 21. The effective parts of the MREs are made into the single magnetic domain structure without being limited by the track width, track pitch, etc., by which the generation of the Barkhausen noise eliminated and the lower noises are attained.</description><language>eng</language><subject>INFORMATION STORAGE ; INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER ; PHYSICS</subject><creationdate>1988</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880919&amp;DB=EPODOC&amp;CC=JP&amp;NR=S63224017A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19880919&amp;DB=EPODOC&amp;CC=JP&amp;NR=S63224017A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AOI TAKAHISA</creatorcontrib><title>MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD</title><description>PURPOSE:To remove the Barkhausen noise occurring in irregular magnetic wall movement and to reduce noises by minimizing the influence of the diamagnetizing fields in respective MREs and forming the effective working region parts of the MREs into single magnetic domain structure. CONSTITUTION:The magneto-resistance element (MRE) 20, 21 are juxtaposed in extreme proximity to each other in the transverse direction F of tracks via insulating layers on a substrate 19. The MREs 20, 21 respectively have very small spacings 22, 23 widths delta1, delta2 and are patterned to a closed magnetic path of a folded type. Electrodes are formed to the respective MREs 20, 21 in such a manner that only the resistance changes in the respective central working regions can be detected. The MRE 20 has the electrodes 24, 25 and the MRE 21 has the electrodes 25, 26. The electrode 25 is a common electrode across the MREs 20, 21. The effective parts of the MREs are made into the single magnetic domain structure without being limited by the track width, track pitch, etc., by which the generation of the Barkhausen noise eliminated and the lower noises are attained.</description><subject>INFORMATION STORAGE</subject><subject>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1988</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3dXT3cw3x1w1yDfYMDnH0c3ZVCIkMABIenn4Kbp4-vgoQFZ7OCh6uji48DKxpiTnFqbxQmptB0c01xNlDN7UgPz61uCAxOTUvtSTeKyDYzNjIyMTA0NzRmBg1AAUwJiA</recordid><startdate>19880919</startdate><enddate>19880919</enddate><creator>AOI TAKAHISA</creator><scope>EVB</scope></search><sort><creationdate>19880919</creationdate><title>MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD</title><author>AOI TAKAHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS63224017A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1988</creationdate><topic>INFORMATION STORAGE</topic><topic>INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>AOI TAKAHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AOI TAKAHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD</title><date>1988-09-19</date><risdate>1988</risdate><abstract>PURPOSE:To remove the Barkhausen noise occurring in irregular magnetic wall movement and to reduce noises by minimizing the influence of the diamagnetizing fields in respective MREs and forming the effective working region parts of the MREs into single magnetic domain structure. CONSTITUTION:The magneto-resistance element (MRE) 20, 21 are juxtaposed in extreme proximity to each other in the transverse direction F of tracks via insulating layers on a substrate 19. The MREs 20, 21 respectively have very small spacings 22, 23 widths delta1, delta2 and are patterned to a closed magnetic path of a folded type. Electrodes are formed to the respective MREs 20, 21 in such a manner that only the resistance changes in the respective central working regions can be detected. The MRE 20 has the electrodes 24, 25 and the MRE 21 has the electrodes 25, 26. The electrode 25 is a common electrode across the MREs 20, 21. The effective parts of the MREs are made into the single magnetic domain structure without being limited by the track width, track pitch, etc., by which the generation of the Barkhausen noise eliminated and the lower noises are attained.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPS63224017A
source esp@cenet
subjects INFORMATION STORAGE
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
PHYSICS
title MAGNETO-RESISTANCE TYPE THIN FILM MAGNETIC HEAD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T17%3A02%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=AOI%20TAKAHISA&rft.date=1988-09-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS63224017A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true