SEMICONDUCTOR LASER AND MANUFACTURE OF SAME

PURPOSE:To easily accomplish the collection of a laser light by making the guide layer part above the stripe-wise current injection part between the internal current constriction layers project to the ground side, and making the cross-sectional shape parallel with the light emitting end face of the projecting part into a rectangle, thereby obtaining a high output. CONSTITUTION:On a compound semiconductor ground 51, internal current constriction layers 53, a lower clad layer 59, a guide layer 61, an active layer 63 and an upper clad layer 65 are provided. At that time, the surface of the side of the guide layer 61 in contact with the active layer 63 is made a planer surface. The part of the guide layer 61 above and corresponding to a striped current injection part 55 between the narrowing layers 53 is made to project to the substrate 51 side. The light emitting end face and a parallel cross section of a projecting part 61a are practically of rectangular shapes. Whereupon, since the light emitted at the active layer 63 oozes out into the guide layer 61, the light emitting area is widened. With this, a high output is obtained, and the collection of a laser light is easily accomplished.