JPS628957B

PURPOSE:To obtain a monolithic light detector element of optional cut-off wavelength, by establishing regions of different band gaps in a compound semiconductor substrate and providing light detection portions at optional places on the regions. CONSTITUTION:A p-type Hg1-xCdxTe layer 11 is grown on a...

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Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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