APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR

APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR

PURPOSE:To improve the quality of an amorphous semiconductor thin film by plus biasing the potential of a semiconductor thin film forming portion on an insulating substrate in case of manufacturing the thin film by a plasma CVD method and preventing positive ions coming from a plasma from colliding....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: NABETA OSAMU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator NABETA OSAMU
description PURPOSE:To improve the quality of an amorphous semiconductor thin film by plus biasing the potential of a semiconductor thin film forming portion on an insulating substrate in case of manufacturing the thin film by a plasma CVD method and preventing positive ions coming from a plasma from colliding. CONSTITUTION:A transparent electrode 8 is applied on the surface of a glass substrate 5 placed on a lower electrode 3, and a conductive mask 9 for forming a film is superposed thereon. The mask 9 is electrically connected by a connecting conductor 10 with the electrode 3, and a high-frequency power source 11 and a DC power source 12 are inserted in series between upper and lower electrodes 2 and 3. Accordingly, the amorphous film forming portion of the substrate 5 becomes the same potential as the electrode 3. Thus, the amorphous film forming portion is plus biased to prevent positive ions during plasma during a glow discharge decomposing from colliding, thereby improving the quality of the obtained film.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS6281021A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS6281021A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS6281021A3</originalsourceid><addsrcrecordid>eNrjZDB2DAhwDHIMCQ1WcPMPUvB19At1c3QOCQ3y9HNXCPHw9FNw8_TxVQh29fV09vdzCXUO8Q_iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgHBZkYWhgZGho7GRCgBAHrJJz4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR</title><source>esp@cenet</source><creator>NABETA OSAMU</creator><creatorcontrib>NABETA OSAMU</creatorcontrib><description>PURPOSE:To improve the quality of an amorphous semiconductor thin film by plus biasing the potential of a semiconductor thin film forming portion on an insulating substrate in case of manufacturing the thin film by a plasma CVD method and preventing positive ions coming from a plasma from colliding. CONSTITUTION:A transparent electrode 8 is applied on the surface of a glass substrate 5 placed on a lower electrode 3, and a conductive mask 9 for forming a film is superposed thereon. The mask 9 is electrically connected by a connecting conductor 10 with the electrode 3, and a high-frequency power source 11 and a DC power source 12 are inserted in series between upper and lower electrodes 2 and 3. Accordingly, the amorphous film forming portion of the substrate 5 becomes the same potential as the electrode 3. Thus, the amorphous film forming portion is plus biased to prevent positive ions during plasma during a glow discharge decomposing from colliding, thereby improving the quality of the obtained film.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19870414&amp;DB=EPODOC&amp;CC=JP&amp;NR=S6281021A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19870414&amp;DB=EPODOC&amp;CC=JP&amp;NR=S6281021A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NABETA OSAMU</creatorcontrib><title>APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR</title><description>PURPOSE:To improve the quality of an amorphous semiconductor thin film by plus biasing the potential of a semiconductor thin film forming portion on an insulating substrate in case of manufacturing the thin film by a plasma CVD method and preventing positive ions coming from a plasma from colliding. CONSTITUTION:A transparent electrode 8 is applied on the surface of a glass substrate 5 placed on a lower electrode 3, and a conductive mask 9 for forming a film is superposed thereon. The mask 9 is electrically connected by a connecting conductor 10 with the electrode 3, and a high-frequency power source 11 and a DC power source 12 are inserted in series between upper and lower electrodes 2 and 3. Accordingly, the amorphous film forming portion of the substrate 5 becomes the same potential as the electrode 3. Thus, the amorphous film forming portion is plus biased to prevent positive ions during plasma during a glow discharge decomposing from colliding, thereby improving the quality of the obtained film.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB2DAhwDHIMCQ1WcPMPUvB19At1c3QOCQ3y9HNXCPHw9FNw8_TxVQh29fV09vdzCXUO8Q_iYWBNS8wpTuWF0twMCm6uIc4euqkF-fGpxQWJyal5qSXxXgHBZkYWhgZGho7GRCgBAHrJJz4</recordid><startdate>19870414</startdate><enddate>19870414</enddate><creator>NABETA OSAMU</creator><scope>EVB</scope></search><sort><creationdate>19870414</creationdate><title>APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR</title><author>NABETA OSAMU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6281021A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NABETA OSAMU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NABETA OSAMU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR</title><date>1987-04-14</date><risdate>1987</risdate><abstract>PURPOSE:To improve the quality of an amorphous semiconductor thin film by plus biasing the potential of a semiconductor thin film forming portion on an insulating substrate in case of manufacturing the thin film by a plasma CVD method and preventing positive ions coming from a plasma from colliding. CONSTITUTION:A transparent electrode 8 is applied on the surface of a glass substrate 5 placed on a lower electrode 3, and a conductive mask 9 for forming a film is superposed thereon. The mask 9 is electrically connected by a connecting conductor 10 with the electrode 3, and a high-frequency power source 11 and a DC power source 12 are inserted in series between upper and lower electrodes 2 and 3. Accordingly, the amorphous film forming portion of the substrate 5 becomes the same potential as the electrode 3. Thus, the amorphous film forming portion is plus biased to prevent positive ions during plasma during a glow discharge decomposing from colliding, thereby improving the quality of the obtained film.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_JPS6281021A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title APPARATUS FOR MANUFACTURING THIN FILM SEMICONDUCTOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T12%3A15%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NABETA%20OSAMU&rft.date=1987-04-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS6281021A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true