JPS6259895B
PURPOSE:To obtain a multi-wavelength light beam sensing element of the monolithic structure by stacking semiconductor layers in different compositions for epitaxial growth on a compound semiconductor substrate, forming the surface like a staircase by etching, using this surface as the light sensible...
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| creator | HASE NOBUYASU |
| description | PURPOSE:To obtain a multi-wavelength light beam sensing element of the monolithic structure by stacking semiconductor layers in different compositions for epitaxial growth on a compound semiconductor substrate, forming the surface like a staircase by etching, using this surface as the light sensible area and providing opposing electrodes to both ends thereof. CONSTITUTION:The In0.79Ga0.21As0.45P0.55 layer 17, In0.67Ga0.33As0.71P0.29 layer 18 and In0.53Ga0.47AsP layer 19 are stacked on an InP substrate 16, allowing epitaxial growth thereof and these layers are etched into a form of staircase until a part of layers 17-19 is respectively exposed to the surface. The surfaces of layers thus exposed are used as the light sensible surfaces 20-23 and the opposing electrodes 24 and 25 of Au/Sn which is continuous like a staircase are deposited to both ends thereof. Otherwise, it is also possible that these electrodes are divided opposingly and an isolation groove is provided between the respectively light sensible surfaces. |
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CONSTITUTION:The In0.79Ga0.21As0.45P0.55 layer 17, In0.67Ga0.33As0.71P0.29 layer 18 and In0.53Ga0.47AsP layer 19 are stacked on an InP substrate 16, allowing epitaxial growth thereof and these layers are etched into a form of staircase until a part of layers 17-19 is respectively exposed to the surface. The surfaces of layers thus exposed are used as the light sensible surfaces 20-23 and the opposing electrodes 24 and 25 of Au/Sn which is continuous like a staircase are deposited to both ends thereof. Otherwise, it is also possible that these electrodes are divided opposingly and an isolation groove is provided between the respectively light sensible surfaces.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; COLORIMETRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871214&DB=EPODOC&CC=JP&NR=S6259895B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871214&DB=EPODOC&CC=JP&NR=S6259895B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HASE NOBUYASU</creatorcontrib><title>JPS6259895B</title><description>PURPOSE:To obtain a multi-wavelength light beam sensing element of the monolithic structure by stacking semiconductor layers in different compositions for epitaxial growth on a compound semiconductor substrate, forming the surface like a staircase by etching, using this surface as the light sensible area and providing opposing electrodes to both ends thereof. CONSTITUTION:The In0.79Ga0.21As0.45P0.55 layer 17, In0.67Ga0.33As0.71P0.29 layer 18 and In0.53Ga0.47AsP layer 19 are stacked on an InP substrate 16, allowing epitaxial growth thereof and these layers are etched into a form of staircase until a part of layers 17-19 is respectively exposed to the surface. The surfaces of layers thus exposed are used as the light sensible surfaces 20-23 and the opposing electrodes 24 and 25 of Au/Sn which is continuous like a staircase are deposited to both ends thereof. Otherwise, it is also possible that these electrodes are divided opposingly and an isolation groove is provided between the respectively light sensible surfaces.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>COLORIMETRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOD2Cgg2MzK1tLA0deJhYE1LzClO5YXS3AxKbq4hzh66qQX58anFBYnJqXmpJfFIOpyMjIlSBACMahyZ</recordid><startdate>19871214</startdate><enddate>19871214</enddate><creator>HASE NOBUYASU</creator><scope>EVB</scope></search><sort><creationdate>19871214</creationdate><title>JPS6259895B</title><author>HASE NOBUYASU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6259895BB23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>COLORIMETRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>HASE NOBUYASU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HASE NOBUYASU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>JPS6259895B</title><date>1987-12-14</date><risdate>1987</risdate><abstract>PURPOSE:To obtain a multi-wavelength light beam sensing element of the monolithic structure by stacking semiconductor layers in different compositions for epitaxial growth on a compound semiconductor substrate, forming the surface like a staircase by etching, using this surface as the light sensible area and providing opposing electrodes to both ends thereof. CONSTITUTION:The In0.79Ga0.21As0.45P0.55 layer 17, In0.67Ga0.33As0.71P0.29 layer 18 and In0.53Ga0.47AsP layer 19 are stacked on an InP substrate 16, allowing epitaxial growth thereof and these layers are etched into a form of staircase until a part of layers 17-19 is respectively exposed to the surface. The surfaces of layers thus exposed are used as the light sensible surfaces 20-23 and the opposing electrodes 24 and 25 of Au/Sn which is continuous like a staircase are deposited to both ends thereof. Otherwise, it is also possible that these electrodes are divided opposingly and an isolation groove is provided between the respectively light sensible surfaces.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
| title | JPS6259895B |
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