FORMATION OF SELECTIVE MASK

PURPOSE:To form a selective mask simply and accurately by a method wherein an aperture is drilled in two insulating films laminated on a semiconductor surface so as to have a step-shape cross-section and a high melting point metal layer is applied only to the part of the semiconductor surface inside...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAWARA TAKASHI, HATTORI ATSUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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