JPS6235268B

JPS6235268B

The invention relates to a method of fabricating a semiconductor device and is characterized by the steps of selectively forming a polycrystalline silicon layer for a gate electrode on a semiconductor substrate, forming selectively a nitride film by ion implantation into the surface of the substrate...

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1. Verfasser: OSA YASUNOBU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator OSA YASUNOBU
description The invention relates to a method of fabricating a semiconductor device and is characterized by the steps of selectively forming a polycrystalline silicon layer for a gate electrode on a semiconductor substrate, forming selectively a nitride film by ion implantation into the surface of the substrate, on which the silicon layer is not formed, and thereafter oxidizing the surface of the silicon layer using the nitride film as a mask thereby to form an oxidation film on the silicon layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title JPS6235268B
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