MEASURING METHOD FOR SEMICONDUCTOR TRAP
PURPOSE:To discriminate informations regarding a semiconductor trap into an electronic trap and a hole trap by generating Hall voltage in a semiconductor and analyzing the transient response of the Hall voltage when measuring the semiconductor trap. CONSTITUTION:When bias voltage is applied between...
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| creator | KASHIYANAGI YUZO NAKAMURA YOSHIO |
| description | PURPOSE:To discriminate informations regarding a semiconductor trap into an electronic trap and a hole trap by generating Hall voltage in a semiconductor and analyzing the transient response of the Hall voltage when measuring the semiconductor trap. CONSTITUTION:When bias voltage is applied between both ohmic electrodes 12, 13 of a semiconductor through a bias supply 16 and the semiconductor is irradiated by optical pulses, currents are generated by excess carriers. A magnetic field is applied to the semiconductor, crossing at a right angle with the currents, and Hall voltage is generated in the direction orthogonal to the directions of these currents and both magnetic fields, a section between both ohmic electrodes 14, 15. Since the directions that currents are bent by the magnetic field are made to differ in currents, voltage symbols are also made to differ mutually by electrons and holes in Hall voltage. Accordingly, the transient response of Hall voltage is amplified by an amplifier 17 and inputted to a boxcar averager 18 and processed, and the processed signal is inputted to a computer 19 and analyzed, thus discriminating and acquiring informations regarding a trap as an electronic trap and a hole trap, then also determining the difference of the electronic trap and the hole trap. |
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CONSTITUTION:When bias voltage is applied between both ohmic electrodes 12, 13 of a semiconductor through a bias supply 16 and the semiconductor is irradiated by optical pulses, currents are generated by excess carriers. A magnetic field is applied to the semiconductor, crossing at a right angle with the currents, and Hall voltage is generated in the direction orthogonal to the directions of these currents and both magnetic fields, a section between both ohmic electrodes 14, 15. Since the directions that currents are bent by the magnetic field are made to differ in currents, voltage symbols are also made to differ mutually by electrons and holes in Hall voltage. Accordingly, the transient response of Hall voltage is amplified by an amplifier 17 and inputted to a boxcar averager 18 and processed, and the processed signal is inputted to a computer 19 and analyzed, thus discriminating and acquiring informations regarding a trap as an electronic trap and a hole trap, then also determining the difference of the electronic trap and the hole trap.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>1987</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871221&DB=EPODOC&CC=JP&NR=S62293732A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19871221&DB=EPODOC&CC=JP&NR=S62293732A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KASHIYANAGI YUZO</creatorcontrib><creatorcontrib>NAKAMURA YOSHIO</creatorcontrib><title>MEASURING METHOD FOR SEMICONDUCTOR TRAP</title><description>PURPOSE:To discriminate informations regarding a semiconductor trap into an electronic trap and a hole trap by generating Hall voltage in a semiconductor and analyzing the transient response of the Hall voltage when measuring the semiconductor trap. 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Accordingly, the transient response of Hall voltage is amplified by an amplifier 17 and inputted to a boxcar averager 18 and processed, and the processed signal is inputted to a computer 19 and analyzed, thus discriminating and acquiring informations regarding a trap as an electronic trap and a hole trap, then also determining the difference of the electronic trap and the hole trap.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1987</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3dXUMDg3y9HNX8HUN8fB3UXDzD1IIdvX1dPb3cwl1DgHyQoIcA3gYWNMSc4pTeaE0N4Oim2uIs4duakF-fGpxQWJyal5qSbxXQLCZkZGlsbmxkaMxMWoAACwkUw</recordid><startdate>19871221</startdate><enddate>19871221</enddate><creator>KASHIYANAGI YUZO</creator><creator>NAKAMURA YOSHIO</creator><scope>EVB</scope></search><sort><creationdate>19871221</creationdate><title>MEASURING METHOD FOR SEMICONDUCTOR TRAP</title><author>KASHIYANAGI YUZO ; NAKAMURA YOSHIO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS62293732A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1987</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>KASHIYANAGI YUZO</creatorcontrib><creatorcontrib>NAKAMURA YOSHIO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KASHIYANAGI YUZO</au><au>NAKAMURA YOSHIO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MEASURING METHOD FOR SEMICONDUCTOR TRAP</title><date>1987-12-21</date><risdate>1987</risdate><abstract>PURPOSE:To discriminate informations regarding a semiconductor trap into an electronic trap and a hole trap by generating Hall voltage in a semiconductor and analyzing the transient response of the Hall voltage when measuring the semiconductor trap. CONSTITUTION:When bias voltage is applied between both ohmic electrodes 12, 13 of a semiconductor through a bias supply 16 and the semiconductor is irradiated by optical pulses, currents are generated by excess carriers. A magnetic field is applied to the semiconductor, crossing at a right angle with the currents, and Hall voltage is generated in the direction orthogonal to the directions of these currents and both magnetic fields, a section between both ohmic electrodes 14, 15. Since the directions that currents are bent by the magnetic field are made to differ in currents, voltage symbols are also made to differ mutually by electrons and holes in Hall voltage. Accordingly, the transient response of Hall voltage is amplified by an amplifier 17 and inputted to a boxcar averager 18 and processed, and the processed signal is inputted to a computer 19 and analyzed, thus discriminating and acquiring informations regarding a trap as an electronic trap and a hole trap, then also determining the difference of the electronic trap and the hole trap.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | MEASURING METHOD FOR SEMICONDUCTOR TRAP |
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