JPS6227040B
A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so t...
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| creator | SHINHO MASARU FUKUDA KYOSHI |
| description | A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces. |
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APPARATUS THEREFOR ; ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; CLADDING OR PLATING BY SOLDERING OR WELDING ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CRYSTAL GROWTH ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; MACHINE TOOLS ; MEASURING ; MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; METALLURGY ; PERFORMING OPERATIONS ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SLAG ; SOLDERING OR UNSOLDERING ; TESTING ; TRANSPORTING ; TREATMENT OF NATURAL STONE ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL ; 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(ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY CLADDING OR PLATING BY SOLDERING OR WELDING COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA MACHINE TOOLS MEASURING MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE METAL-WORKING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG SOLDERING OR UNSOLDERING TESTING TRANSPORTING TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WELDING WORKING BY LASER BEAM |
| title | JPS6227040B |
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