SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PURPOSE:To facilitate forming patterns such as wirings on the surface of predetermined layers without producing defects by a method wherein steps in the surface are so provided as to make the lengths of patterns which pass near the highest parts of the steps shorter or a structure in which there are practically no steps in the surface is provided. CONSTITUTION:A field insulating film 2 and an insulating film 3 are provided on the surface of a semiconductor substrate 1 and, for instance, a rectangular polycrystalline Si film 4 is provided on them. A layer insulating film 5 is provided so as to cover the polycrystalline Si film 4 and an Al film 6 and a photoresist film 7 are provided on the layer insulating film 5. As the parts of the surface of the layer insulating film 5 corresponding to the circumference 4a of the polycrystalline Si film 4 are the highest parts in this case, the thicknesses of the parts of the photoresist film 7 corresponding to the highest parts become thinner. However, the lengths of the parts of Al wirings 8 which are formed by etching the Al film 6 and pass near the highest parts are made to be shorter by predetermined values. With this constitution, the adhesion strengths of the parts of the photoresist film 7 where the film 7 is thinner to the Al film 6 are compensated by the adhesion strengths of the surrounding parts where the thickness is large. Therefore, defects of the Al wirings 8 such as distortion and short circuit can be avoided.