ECR PLASMA DEVICE

PURPOSE:To control the acceleration of ion beams while enabling a substrate with large diameter to be processed by a method wherein a space in a divergence magnetic field leading-in the ion beams from a plasma production chamber and expanding the diameter of ion beams is provided between the plasma...

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Hauptverfasser: MATSUO SEITARO, NUMAJIRI KENJI, SASAKI MASAMI, INO YOICHI
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creator MATSUO SEITARO
NUMAJIRI KENJI
SASAKI MASAMI
INO YOICHI
description PURPOSE:To control the acceleration of ion beams while enabling a substrate with large diameter to be processed by a method wherein a space in a divergence magnetic field leading-in the ion beams from a plasma production chamber and expanding the diameter of ion beams is provided between the plasma production chamber and a grid. CONSTITUTION:A space 30 is provided on a divergence magnetic field. A microwave reflecting sheet 11 is made of a metallic net with fairly fine mesh and high aperture rate, the diameter of ion beams coming out of the metallic net is notably expanded in the space 30 of divergence magnetic field reaching a grid 32 at a floating potential; and the beams, after being accelerated by another grid 33 at earth potential, irradiate a substrate 8 on a substrate holder 7. In such a constitution, a conical metallic shielding sheet 34 connected to the room walls of a plasma production chamber 1 together with the grid 32 at floating potential prevent the ion beams 31 expanding the diameter thereof from being disturbed by an intensive electric field as well as the surface processing of substrate 8 from becoming uneven.
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
title ECR PLASMA DEVICE
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