SUSCEPTOR FOR VAPOR GROWTH
PURPOSE:To upgrade quality of products and to improve productivity by reducing cooling time after vapor growth by a method wherein an outer periphery of a susceptor is thickened and the thickness thereof is stepped down toward an inner periphery. CONSTITUTION:A susceptor 31 is heated uniformly even...
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| creator | KASHIWAGI NOBUO SUZUKI SHIGERU MIYANOMAE YOSHIHIRO IWATA KOTEI |
| description | PURPOSE:To upgrade quality of products and to improve productivity by reducing cooling time after vapor growth by a method wherein an outer periphery of a susceptor is thickened and the thickness thereof is stepped down toward an inner periphery. CONSTITUTION:A susceptor 31 is heated uniformly even at the heat-up time when power supply is high, since an outer periphery A of a work coil 20, whose electric power density is high, is thick and an inner periphery B, whose electric power density is low, is thin by means that the outer periphery A there of is thickened and the thickness of the undersurface is stepped down toward the inner periphery thereof. After vapor growth, when the susceptor 31 is cooled by carrier gas, the outer periphery a is cooled quickly because of the presence of an exhaust vent 25 and meanwhile cooling rate of the inner periphery B, whose cooling rate is slow, is hasty, therefore, whole cooling rate comes to be hasty. Thereby, generation of strip is restrained and high-quality vapor growth is possible. |
| format | Patent |
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CONSTITUTION:A susceptor 31 is heated uniformly even at the heat-up time when power supply is high, since an outer periphery A of a work coil 20, whose electric power density is high, is thick and an inner periphery B, whose electric power density is low, is thin by means that the outer periphery A there of is thickened and the thickness of the undersurface is stepped down toward the inner periphery thereof. After vapor growth, when the susceptor 31 is cooled by carrier gas, the outer periphery a is cooled quickly because of the presence of an exhaust vent 25 and meanwhile cooling rate of the inner periphery B, whose cooling rate is slow, is hasty, therefore, whole cooling rate comes to be hasty. Thereby, generation of strip is restrained and high-quality vapor growth is possible.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860918&DB=EPODOC&CC=JP&NR=S61210621A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860918&DB=EPODOC&CC=JP&NR=S61210621A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KASHIWAGI NOBUO</creatorcontrib><creatorcontrib>SUZUKI SHIGERU</creatorcontrib><creatorcontrib>MIYANOMAE YOSHIHIRO</creatorcontrib><creatorcontrib>IWATA KOTEI</creatorcontrib><title>SUSCEPTOR FOR VAPOR GROWTH</title><description>PURPOSE:To upgrade quality of products and to improve productivity by reducing cooling time after vapor growth by a method wherein an outer periphery of a susceptor is thickened and the thickness thereof is stepped down toward an inner periphery. CONSTITUTION:A susceptor 31 is heated uniformly even at the heat-up time when power supply is high, since an outer periphery A of a work coil 20, whose electric power density is high, is thick and an inner periphery B, whose electric power density is low, is thin by means that the outer periphery A there of is thickened and the thickness of the undersurface is stepped down toward the inner periphery thereof. After vapor growth, when the susceptor 31 is cooled by carrier gas, the outer periphery a is cooled quickly because of the presence of an exhaust vent 25 and meanwhile cooling rate of the inner periphery B, whose cooling rate is slow, is hasty, therefore, whole cooling rate comes to be hasty. Thereby, generation of strip is restrained and high-quality vapor growth is possible.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKDg12dg0I8Q9ScAPiMMcAIOke5B8e4sHDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-K9AoLNDI0MDcyMDB2NiVEDAE9wILE</recordid><startdate>19860918</startdate><enddate>19860918</enddate><creator>KASHIWAGI NOBUO</creator><creator>SUZUKI SHIGERU</creator><creator>MIYANOMAE YOSHIHIRO</creator><creator>IWATA KOTEI</creator><scope>EVB</scope></search><sort><creationdate>19860918</creationdate><title>SUSCEPTOR FOR VAPOR GROWTH</title><author>KASHIWAGI NOBUO ; SUZUKI SHIGERU ; MIYANOMAE YOSHIHIRO ; IWATA KOTEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS61210621A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>KASHIWAGI NOBUO</creatorcontrib><creatorcontrib>SUZUKI SHIGERU</creatorcontrib><creatorcontrib>MIYANOMAE YOSHIHIRO</creatorcontrib><creatorcontrib>IWATA KOTEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KASHIWAGI NOBUO</au><au>SUZUKI SHIGERU</au><au>MIYANOMAE YOSHIHIRO</au><au>IWATA KOTEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SUSCEPTOR FOR VAPOR GROWTH</title><date>1986-09-18</date><risdate>1986</risdate><abstract>PURPOSE:To upgrade quality of products and to improve productivity by reducing cooling time after vapor growth by a method wherein an outer periphery of a susceptor is thickened and the thickness thereof is stepped down toward an inner periphery. CONSTITUTION:A susceptor 31 is heated uniformly even at the heat-up time when power supply is high, since an outer periphery A of a work coil 20, whose electric power density is high, is thick and an inner periphery B, whose electric power density is low, is thin by means that the outer periphery A there of is thickened and the thickness of the undersurface is stepped down toward the inner periphery thereof. After vapor growth, when the susceptor 31 is cooled by carrier gas, the outer periphery a is cooled quickly because of the presence of an exhaust vent 25 and meanwhile cooling rate of the inner periphery B, whose cooling rate is slow, is hasty, therefore, whole cooling rate comes to be hasty. Thereby, generation of strip is restrained and high-quality vapor growth is possible.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUSCEPTOR FOR VAPOR GROWTH |
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