FORMATION OF SINGLE CRYSTAL THIN FILM

PURPOSE:To form a large area single crystal thin film which has few defects due to heating with a heater of energy beam irradiation, a lamp, etc. by using a silicon oxide nitride film as an insulation film between a thin film to be crystallized to single crystal and a substrate. CONSTITUTION:After a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KOBA MASAYOSHI, MORISHITA TADAYUKI, KUDO ATSUSHI, MIYAJIMA TOSHIAKI, AWANE KATSUTERU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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