FLOATING GATE TYPE NONVOLATILE MEMORY ELEMENT

PURPOSE:To perform an erasing action by turning on a transistor added to a floating gate and therefore discharging the electric charge stored in the floating gate part. CONSTITUTION:A transistor containing a drain 9, a source 10 and a gate 11 is cut off by floating gate type memory element. Thus onl...

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1. Verfasser:	ARIGA RIE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
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creator	ARIGA RIE
description	PURPOSE:To perform an erasing action by turning on a transistor added to a floating gate and therefore discharging the electric charge stored in the floating gate part. CONSTITUTION:A transistor containing a drain 9, a source 10 and a gate 11 is cut off by floating gate type memory element. Thus only the floating gate type memory containing a source 5, a drain 6, a floating gate 7 and a control gate 8 is independent effectively. Then the temporary storage of the electric charge is possible with a floating gate type memory element. While the stored electric charge of the memory element can be discharged by turning on the transistor.
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CONSTITUTION:A transistor containing a drain 9, a source 10 and a gate 11 is cut off by floating gate type memory element. Thus only the floating gate type memory containing a source 5, a drain 6, a floating gate 7 and a control gate 8 is independent effectively. Then the temporary storage of the electric charge is possible with a floating gate type memory element. While the stored electric charge of the memory element can be discharged by turning on the transistor.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; SEMICONDUCTOR DEVICES ; STATIC STORES</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860726&DB=EPODOC&CC=JP&NR=S61165896A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860726&DB=EPODOC&CC=JP&NR=S61165896A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ARIGA RIE</creatorcontrib><title>FLOATING GATE TYPE NONVOLATILE MEMORY ELEMENT</title><description>PURPOSE:To perform an erasing action by turning on a transistor added to a floating gate and therefore discharging the electric charge stored in the floating gate part. 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While the stored electric charge of the memory element can be discharged by turning on the transistor.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB18_F3DPH0c1dwdwxxVQiJDHBV8PP3C_P3AYr6uCr4uvr6B0UquPq4-rr6hfAwsKYl5hSn8kJpbgZFN9cQZw_d1IL8-NTigsTk1LzUknivgGAzQ0MzUwtLM0djYtQAANfVJgU</recordid><startdate>19860726</startdate><enddate>19860726</enddate><creator>ARIGA RIE</creator><scope>EVB</scope></search><sort><creationdate>19860726</creationdate><title>FLOATING GATE TYPE NONVOLATILE MEMORY ELEMENT</title><author>ARIGA RIE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS61165896A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ARIGA RIE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ARIGA RIE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FLOATING GATE TYPE NONVOLATILE MEMORY ELEMENT</title><date>1986-07-26</date><risdate>1986</risdate><abstract>PURPOSE:To perform an erasing action by turning on a transistor added to a floating gate and therefore discharging the electric charge stored in the floating gate part. CONSTITUTION:A transistor containing a drain 9, a source 10 and a gate 11 is cut off by floating gate type memory element. Thus only the floating gate type memory containing a source 5, a drain 6, a floating gate 7 and a control gate 8 is independent effectively. Then the temporary storage of the electric charge is possible with a floating gate type memory element. While the stored electric charge of the memory element can be discharged by turning on the transistor.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES
title	FLOATING GATE TYPE NONVOLATILE MEMORY ELEMENT
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