ELECTRONIC DEVICE

PURPOSE:To improve high frequency characteritics, by providing the third metal such as Cr between an M film and an Al wiring, and decreasing the contact resistance at the connecting part of an Mo gate and the Al wiring. CONSTITUTION:On a semiconductor substrate 1, a gate 3 comprising Mo, an insulati...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUZAWA MANABU, OKUBO TOSHIO, KOBAYASHI MASAMICHI, TERADA YOSHIHARU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To improve high frequency characteritics, by providing the third metal such as Cr between an M film and an Al wiring, and decreasing the contact resistance at the connecting part of an Mo gate and the Al wiring. CONSTITUTION:On a semiconductor substrate 1, a gate 3 comprising Mo, an insulating film 4 covering said gate 3, and a wiring 7 comprising Al, which is connected to the Mo gate 3 that is exposed through an opening part 5 in the insulating film 4, are provided. Third metal 6 is provided at least on the surface of a part of the Mo gate 3, which is exposed through the opening part 5 in the insulating film 4. Thus the movement of O2 included in the Mo film into the Al film is blocked, the contact resistance of Mo and Al is decreased and the high frequency characteristics can be improved.