PLASMA ETCHING DEVICE
PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowin...
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| creator | KURISAKI TETSUO SHIBAGAKI MASAHIRO |
| description | PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowing ports and constituting the gas blowing ports under an openable-closeable condition. CONSTITUTION:In a plasma etching device which is provided with an electrode (not shown in the figure) for fixing an object to be treated and a gas blowing electrode 9 united with an upper electrode 7 facing the first mentioned electrode and equipped with gas blowing ports 8 and has such a constitution that the etching gas supplied from a gas supplying tube 10 is blown into the space between both electrodes from the gas blowing ports 8, a shielding plate 22 which is contacted with the inner bottom surface of the gas blowing electrode 9 is provided and gas blowing ports 23 corresponding to the gas blowing ports 8 are installed to the shielding plate 22. In addition, the shielding plate 22 is constituted in such a way that the plate 22 can be rotated, by means of a driving device 25 through a shaft 24. While etching is made with this plasma etching device, the gas blowing ports 8 and 23 are made coincident with each other and, when the etching is completed, the shielding plate 22 is immediately rotated and the blowing of gas is stopped, so as to prevent the occurrence of undercut, etc., in the object to be treated. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS61127876A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS61127876A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS61127876A3</originalsourceid><addsrcrecordid>eNrjZBAN8HEM9nVUcA1x9vD0c1dwcQ3zdHblYWBNS8wpTuWF0twMim4gFbqpBfnxqcUFicmpeakl8V4BwWaGhkbmFuZmjsbEqAEAjzcfEA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA ETCHING DEVICE</title><source>esp@cenet</source><creator>KURISAKI TETSUO ; SHIBAGAKI MASAHIRO</creator><creatorcontrib>KURISAKI TETSUO ; SHIBAGAKI MASAHIRO</creatorcontrib><description>PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowing ports and constituting the gas blowing ports under an openable-closeable condition. CONSTITUTION:In a plasma etching device which is provided with an electrode (not shown in the figure) for fixing an object to be treated and a gas blowing electrode 9 united with an upper electrode 7 facing the first mentioned electrode and equipped with gas blowing ports 8 and has such a constitution that the etching gas supplied from a gas supplying tube 10 is blown into the space between both electrodes from the gas blowing ports 8, a shielding plate 22 which is contacted with the inner bottom surface of the gas blowing electrode 9 is provided and gas blowing ports 23 corresponding to the gas blowing ports 8 are installed to the shielding plate 22. In addition, the shielding plate 22 is constituted in such a way that the plate 22 can be rotated, by means of a driving device 25 through a shaft 24. While etching is made with this plasma etching device, the gas blowing ports 8 and 23 are made coincident with each other and, when the etching is completed, the shielding plate 22 is immediately rotated and the blowing of gas is stopped, so as to prevent the occurrence of undercut, etc., in the object to be treated.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860616&DB=EPODOC&CC=JP&NR=S61127876A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19860616&DB=EPODOC&CC=JP&NR=S61127876A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KURISAKI TETSUO</creatorcontrib><creatorcontrib>SHIBAGAKI MASAHIRO</creatorcontrib><title>PLASMA ETCHING DEVICE</title><description>PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowing ports and constituting the gas blowing ports under an openable-closeable condition. CONSTITUTION:In a plasma etching device which is provided with an electrode (not shown in the figure) for fixing an object to be treated and a gas blowing electrode 9 united with an upper electrode 7 facing the first mentioned electrode and equipped with gas blowing ports 8 and has such a constitution that the etching gas supplied from a gas supplying tube 10 is blown into the space between both electrodes from the gas blowing ports 8, a shielding plate 22 which is contacted with the inner bottom surface of the gas blowing electrode 9 is provided and gas blowing ports 23 corresponding to the gas blowing ports 8 are installed to the shielding plate 22. In addition, the shielding plate 22 is constituted in such a way that the plate 22 can be rotated, by means of a driving device 25 through a shaft 24. While etching is made with this plasma etching device, the gas blowing ports 8 and 23 are made coincident with each other and, when the etching is completed, the shielding plate 22 is immediately rotated and the blowing of gas is stopped, so as to prevent the occurrence of undercut, etc., in the object to be treated.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAN8HEM9nVUcA1x9vD0c1dwcQ3zdHblYWBNS8wpTuWF0twMim4gFbqpBfnxqcUFicmpeakl8V4BwWaGhkbmFuZmjsbEqAEAjzcfEA</recordid><startdate>19860616</startdate><enddate>19860616</enddate><creator>KURISAKI TETSUO</creator><creator>SHIBAGAKI MASAHIRO</creator><scope>EVB</scope></search><sort><creationdate>19860616</creationdate><title>PLASMA ETCHING DEVICE</title><author>KURISAKI TETSUO ; SHIBAGAKI MASAHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS61127876A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KURISAKI TETSUO</creatorcontrib><creatorcontrib>SHIBAGAKI MASAHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KURISAKI TETSUO</au><au>SHIBAGAKI MASAHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA ETCHING DEVICE</title><date>1986-06-16</date><risdate>1986</risdate><abstract>PURPOSE:To obtain a plasma etching device which can prevent the occurrence of undercut and corrosion in an object to be treated, by providing an electrode which fixes an object to be treated in a vacuum vessel and another electrode facing to the first mentioned electrode and equipped with gas blowing ports and constituting the gas blowing ports under an openable-closeable condition. CONSTITUTION:In a plasma etching device which is provided with an electrode (not shown in the figure) for fixing an object to be treated and a gas blowing electrode 9 united with an upper electrode 7 facing the first mentioned electrode and equipped with gas blowing ports 8 and has such a constitution that the etching gas supplied from a gas supplying tube 10 is blown into the space between both electrodes from the gas blowing ports 8, a shielding plate 22 which is contacted with the inner bottom surface of the gas blowing electrode 9 is provided and gas blowing ports 23 corresponding to the gas blowing ports 8 are installed to the shielding plate 22. In addition, the shielding plate 22 is constituted in such a way that the plate 22 can be rotated, by means of a driving device 25 through a shaft 24. While etching is made with this plasma etching device, the gas blowing ports 8 and 23 are made coincident with each other and, when the etching is completed, the shielding plate 22 is immediately rotated and the blowing of gas is stopped, so as to prevent the occurrence of undercut, etc., in the object to be treated.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | PLASMA ETCHING DEVICE |
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