FORMATION OF THIN FILM

PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUT...

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Hauptverfasser: HIRATA HISANORI, NISHIMURA KUNIO, NAKAYAMA TAKEHISA, IZUMINA MASANOBU, TSUSHIMO KAZUNAGA, OWADA YOSHIHISA
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creator HIRATA HISANORI
NISHIMURA KUNIO
NAKAYAMA TAKEHISA
IZUMINA MASANOBU
TSUSHIMO KAZUNAGA
OWADA YOSHIHISA
description PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS61116826A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS61116826A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS61116826A3</originalsourceid><addsrcrecordid>eNrjZBBz8w_ydQzx9PdT8HdTCPHw9FNw8_Tx5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BwWaGhoZmFkZmjsbEqAEAsOIfUg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FORMATION OF THIN FILM</title><source>esp@cenet</source><creator>HIRATA HISANORI ; NISHIMURA KUNIO ; NAKAYAMA TAKEHISA ; IZUMINA MASANOBU ; TSUSHIMO KAZUNAGA ; OWADA YOSHIHISA</creator><creatorcontrib>HIRATA HISANORI ; NISHIMURA KUNIO ; NAKAYAMA TAKEHISA ; IZUMINA MASANOBU ; TSUSHIMO KAZUNAGA ; OWADA YOSHIHISA</creatorcontrib><description>PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1986</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19860604&amp;DB=EPODOC&amp;CC=JP&amp;NR=S61116826A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19860604&amp;DB=EPODOC&amp;CC=JP&amp;NR=S61116826A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIRATA HISANORI</creatorcontrib><creatorcontrib>NISHIMURA KUNIO</creatorcontrib><creatorcontrib>NAKAYAMA TAKEHISA</creatorcontrib><creatorcontrib>IZUMINA MASANOBU</creatorcontrib><creatorcontrib>TSUSHIMO KAZUNAGA</creatorcontrib><creatorcontrib>OWADA YOSHIHISA</creatorcontrib><title>FORMATION OF THIN FILM</title><description>PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1986</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBBz8w_ydQzx9PdT8HdTCPHw9FNw8_Tx5WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BwWaGhoZmFkZmjsbEqAEAsOIfUg</recordid><startdate>19860604</startdate><enddate>19860604</enddate><creator>HIRATA HISANORI</creator><creator>NISHIMURA KUNIO</creator><creator>NAKAYAMA TAKEHISA</creator><creator>IZUMINA MASANOBU</creator><creator>TSUSHIMO KAZUNAGA</creator><creator>OWADA YOSHIHISA</creator><scope>EVB</scope></search><sort><creationdate>19860604</creationdate><title>FORMATION OF THIN FILM</title><author>HIRATA HISANORI ; NISHIMURA KUNIO ; NAKAYAMA TAKEHISA ; IZUMINA MASANOBU ; TSUSHIMO KAZUNAGA ; OWADA YOSHIHISA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS61116826A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1986</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HIRATA HISANORI</creatorcontrib><creatorcontrib>NISHIMURA KUNIO</creatorcontrib><creatorcontrib>NAKAYAMA TAKEHISA</creatorcontrib><creatorcontrib>IZUMINA MASANOBU</creatorcontrib><creatorcontrib>TSUSHIMO KAZUNAGA</creatorcontrib><creatorcontrib>OWADA YOSHIHISA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIRATA HISANORI</au><au>NISHIMURA KUNIO</au><au>NAKAYAMA TAKEHISA</au><au>IZUMINA MASANOBU</au><au>TSUSHIMO KAZUNAGA</au><au>OWADA YOSHIHISA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FORMATION OF THIN FILM</title><date>1986-06-04</date><risdate>1986</risdate><abstract>PURPOSE:To form a thin film of uniform thickness on the entire region by supplying RF power to each of 3-5 electrode lines of odd and even numbers from a single unit of power supply through a matching circuit and electrical element and by changing electrical constants of electric elements. CONSTITUTION:The electrical elements 13b, 13d are connected between the terminal 12a of matching circuit 12 and electrodes 9b, 9d of even numbers, while the electrical elements 13a, 13c, 13e between the terminal 12b and electrodes 9a, 9c, 9e of odd numbers. Connecting method, position and kind of electrical element are selected so that uniform discharge of each discharge region becomes uniform. At the time of forming a thin film, raw material gas is introduced to the vacuum condition and RF power is also supplied to each electrode to form plasma between electrodes and discharge intensity of regions is set uniform by adjusting electrical elements. Therefore, it is advantageous to use a variable capacitance and variable coil. According to this structure, a thin film of uniform thickness can be formed in respective regions even with the lateral plasma method having a plurality of discharge regions.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title FORMATION OF THIN FILM
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