VOLTAGE SENSOR
PURPOSE:To obtain a voltage sensor which is superior in safety and maintenance and measures a variance of voltage with a high precision, by forming the cavity layer of a band-pass filter consisting of optical multilayered films with materials which has a high element sensitivity to voltage such as a...
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| creator | FURUTA YOUSUKE HOTSUTA MIKIO NODA HIDEKI KUSAKA SATOSHI |
| description | PURPOSE:To obtain a voltage sensor which is superior in safety and maintenance and measures a variance of voltage with a high precision, by forming the cavity layer of a band-pass filter consisting of optical multilayered films with materials which has a high element sensitivity to voltage such as a PLZT or the like. CONSTITUTION:A cavity layer 2 of the band-pass filter consisting of optical multilayered films has lambda/2 thickness, and TiO2 layers H1-H6 and SiO2 layers L1-L4 have lambda/4 thickness. The cavity layer 2 is formed with a material having a high element sensitivity to voltage, for example, a material such as a PLZT where variance of reflective index due to electric field is large. Meanwhile, the light from a light source 5 is made incident on this voltage sensor 1 through an optical fiber 7 and a lens 9, and the light emitted from the voltage sensor 1 is made incident on a photodetector 6 through a lens 10 and an optical fiber 8. At this time, since the refractive index of the cavity layer 2 of the voltage sensor 1 is changed by an electric field and the transmission loss is changed in accordance with this change when the voltage of a high-voltage transmission line 3 is changed, this change of the transmission loss is detected by a photodetector 6. |
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CONSTITUTION:A cavity layer 2 of the band-pass filter consisting of optical multilayered films has lambda/2 thickness, and TiO2 layers H1-H6 and SiO2 layers L1-L4 have lambda/4 thickness. The cavity layer 2 is formed with a material having a high element sensitivity to voltage, for example, a material such as a PLZT where variance of reflective index due to electric field is large. Meanwhile, the light from a light source 5 is made incident on this voltage sensor 1 through an optical fiber 7 and a lens 9, and the light emitted from the voltage sensor 1 is made incident on a photodetector 6 through a lens 10 and an optical fiber 8. 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CONSTITUTION:A cavity layer 2 of the band-pass filter consisting of optical multilayered films has lambda/2 thickness, and TiO2 layers H1-H6 and SiO2 layers L1-L4 have lambda/4 thickness. The cavity layer 2 is formed with a material having a high element sensitivity to voltage, for example, a material such as a PLZT where variance of reflective index due to electric field is large. Meanwhile, the light from a light source 5 is made incident on this voltage sensor 1 through an optical fiber 7 and a lens 9, and the light emitted from the voltage sensor 1 is made incident on a photodetector 6 through a lens 10 and an optical fiber 8. At this time, since the refractive index of the cavity layer 2 of the voltage sensor 1 is changed by an electric field and the transmission loss is changed in accordance with this change when the voltage of a high-voltage transmission line 3 is changed, this change of the transmission loss is detected by a photodetector 6.</description><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOAL8_cJcXR3VQh29Qv2D-JhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfFeAcFmBuaGlmZGjsZEKAEAomEc9Q</recordid><startdate>19850423</startdate><enddate>19850423</enddate><creator>FURUTA YOUSUKE</creator><creator>HOTSUTA MIKIO</creator><creator>NODA HIDEKI</creator><creator>KUSAKA SATOSHI</creator><scope>EVB</scope></search><sort><creationdate>19850423</creationdate><title>VOLTAGE SENSOR</title><author>FURUTA YOUSUKE ; HOTSUTA MIKIO ; NODA HIDEKI ; KUSAKA SATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS6071962A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FURUTA YOUSUKE</creatorcontrib><creatorcontrib>HOTSUTA MIKIO</creatorcontrib><creatorcontrib>NODA HIDEKI</creatorcontrib><creatorcontrib>KUSAKA SATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FURUTA YOUSUKE</au><au>HOTSUTA MIKIO</au><au>NODA HIDEKI</au><au>KUSAKA SATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>VOLTAGE SENSOR</title><date>1985-04-23</date><risdate>1985</risdate><abstract>PURPOSE:To obtain a voltage sensor which is superior in safety and maintenance and measures a variance of voltage with a high precision, by forming the cavity layer of a band-pass filter consisting of optical multilayered films with materials which has a high element sensitivity to voltage such as a PLZT or the like. CONSTITUTION:A cavity layer 2 of the band-pass filter consisting of optical multilayered films has lambda/2 thickness, and TiO2 layers H1-H6 and SiO2 layers L1-L4 have lambda/4 thickness. The cavity layer 2 is formed with a material having a high element sensitivity to voltage, for example, a material such as a PLZT where variance of reflective index due to electric field is large. Meanwhile, the light from a light source 5 is made incident on this voltage sensor 1 through an optical fiber 7 and a lens 9, and the light emitted from the voltage sensor 1 is made incident on a photodetector 6 through a lens 10 and an optical fiber 8. At this time, since the refractive index of the cavity layer 2 of the voltage sensor 1 is changed by an electric field and the transmission loss is changed in accordance with this change when the voltage of a high-voltage transmission line 3 is changed, this change of the transmission loss is detected by a photodetector 6.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | VOLTAGE SENSOR |
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