FLATTENING OF SURFACE OF SUBSTRATE
PURPOSE:To contrive to enhance precision of abrasion of a semiconductor substrate by a method wherein an abrasion resistant layer formed on the surface part of the substrate other than grooves and having an abrading speed lower than a buried material is utilized as a stopper against mechanical abras...
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creator | KASE YUUSHI TSUKAHARA MASARU DEGUCHI TAKANORI OSA YASUNOBU ITOU KATSUHIKO NOJIRI KAZUO |
description | PURPOSE:To contrive to enhance precision of abrasion of a semiconductor substrate by a method wherein an abrasion resistant layer formed on the surface part of the substrate other than grooves and having an abrading speed lower than a buried material is utilized as a stopper against mechanical abrasion. CONSTITUTION:A material having hardness higher than an abrasive material to be used for mechanical abrasion is selected to form an Si3N4 film 3 to be formed on an SiO2 film 2 on a P type silicon semiconductor substrate 1. The surfaces of grooves 41, 42 are oxidized to form insulating films 6, and when a burying material 7 consisting of poly-silicon is deposited on the whole of the surface of the substrate 1, a recess 8 is generated on the surface of the brad width groove 42 part. To flatten the surface of the buried material 7 without receiving so much the influence of the recess 8, it is favorable to depend on mechanical abrasion. As an abrasive material, SiO2 powder having higher hardness than the poly-silicon of buried material 7, while having lower hardness than Si3N4 constructing the abrasion resistant layer 3 is used. Accordingly, the layer 3 having a slow abrading speed is made to function as a stopper against abrasion, and high precise abrasion can be attained extending over the whole of the surface of the substrate 1. |
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CONSTITUTION:A material having hardness higher than an abrasive material to be used for mechanical abrasion is selected to form an Si3N4 film 3 to be formed on an SiO2 film 2 on a P type silicon semiconductor substrate 1. The surfaces of grooves 41, 42 are oxidized to form insulating films 6, and when a burying material 7 consisting of poly-silicon is deposited on the whole of the surface of the substrate 1, a recess 8 is generated on the surface of the brad width groove 42 part. To flatten the surface of the buried material 7 without receiving so much the influence of the recess 8, it is favorable to depend on mechanical abrasion. As an abrasive material, SiO2 powder having higher hardness than the poly-silicon of buried material 7, while having lower hardness than Si3N4 constructing the abrasion resistant layer 3 is used. 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CONSTITUTION:A material having hardness higher than an abrasive material to be used for mechanical abrasion is selected to form an Si3N4 film 3 to be formed on an SiO2 film 2 on a P type silicon semiconductor substrate 1. The surfaces of grooves 41, 42 are oxidized to form insulating films 6, and when a burying material 7 consisting of poly-silicon is deposited on the whole of the surface of the substrate 1, a recess 8 is generated on the surface of the brad width groove 42 part. To flatten the surface of the buried material 7 without receiving so much the influence of the recess 8, it is favorable to depend on mechanical abrasion. As an abrasive material, SiO2 powder having higher hardness than the poly-silicon of buried material 7, while having lower hardness than Si3N4 constructing the abrasion resistant layer 3 is used. 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subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
title | FLATTENING OF SURFACE OF SUBSTRATE |
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