SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE:To simplify processes and to decrease the threshold value in oscillation, by providing a current narrowing part comprising an N-P junction in a crystal at a step of epitaxial crystal growth. CONSTITUTION:On the (100) surface of a P type InP substrate, an N type InGa AsP layer 9, in which Te is added as impurities, is grown. Then, an SiO2 layer is formed on the N type InGaAsP layer 9. Thereafter a hole is provided by a photoetching technology. The N type InGaAsP layer 9 is etched, and a narrow part 10 is formed. Then a P type InP clad layer 11 in which cadmium Cd is added, a Zn added InGaAsP active layer 12, a Te added N type InP clad layer 13 and Te added N type InGaAsP layer 14 are sequentially provided so as to form an epitaxial crystal. An Au.Sn electrode 8 is provided on the N side of the crystal. An Au.Zn electrode 15 is provided on the P side, i.e., the lower side except light taking-out position. The light is taken out of the P type InP substrate 1. In this constitution, the current passes only the narrow part 10 of the light emitting diode. Therefore the current density is increased. The diode is operated by the lower current in comparison with the conventional device. The diameter of the emitted light can be adjusted by the diameter of the narrow part 10.