PRODUCTION OF SILICON OXIDE FILM
PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto...
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| creator | HIYOUDOU MASATO KAWAHARA HIDEO MISONOO MASAO NAGAYAMA HIROTSUGU HONDA HISAO |
| description | PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS60176947A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS60176947A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS60176947A3</originalsourceid><addsrcrecordid>eNrjZFAICPJ3CXUO8fT3U_B3Uwj29PF0BjEjPF1cFdw8fXx5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8V0CwmYGhuZmlibmjMTFqAP2lIj0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PRODUCTION OF SILICON OXIDE FILM</title><source>esp@cenet</source><creator>HIYOUDOU MASATO ; KAWAHARA HIDEO ; MISONOO MASAO ; NAGAYAMA HIROTSUGU ; HONDA HISAO</creator><creatorcontrib>HIYOUDOU MASATO ; KAWAHARA HIDEO ; MISONOO MASAO ; NAGAYAMA HIROTSUGU ; HONDA HISAO</creatorcontrib><description>PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about <=2mol/l hudrosilicofluoric acid concentration. An aqueous solution of boric acid is then dropped thereto to supersaturate the silicon oxide, and deposit lumps of the silicon oxide therein. A substrate, e.g. flat glassor plastic sheet, is then dipped in the treating solution while continuing the dropping of an adequate amount of the aqueous solution of the boric acid thereto to bring the treating solution in which the lumps of the silicon oxide are suspended to contact with the substrate surface at 0.2-8cm/min speed to form a silicon oxide film of uneven shape on the substrate surface.</description><language>eng</language><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G ; BASIC ELECTRIC ELEMENTS ; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS BASED THEREON ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL PROCESSES OF COMPOUNDING ; GLASS ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; JOINING GLASS TO GLASS OR OTHER MATERIALS ; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES ; METALLURGY ; MINERAL OR SLAG WOOL ; ORGANIC MACROMOLECULAR COMPOUNDS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS ; SURFACE TREATMENT OF GLASS ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; THEIR PREPARATION OR CHEMICAL WORKING-UP ; WORKING-UP</subject><creationdate>1985</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850911&DB=EPODOC&CC=JP&NR=S60176947A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850911&DB=EPODOC&CC=JP&NR=S60176947A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HIYOUDOU MASATO</creatorcontrib><creatorcontrib>KAWAHARA HIDEO</creatorcontrib><creatorcontrib>MISONOO MASAO</creatorcontrib><creatorcontrib>NAGAYAMA HIROTSUGU</creatorcontrib><creatorcontrib>HONDA HISAO</creatorcontrib><title>PRODUCTION OF SILICON OXIDE FILM</title><description>PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about <=2mol/l hudrosilicofluoric acid concentration. An aqueous solution of boric acid is then dropped thereto to supersaturate the silicon oxide, and deposit lumps of the silicon oxide therein. A substrate, e.g. flat glassor plastic sheet, is then dipped in the treating solution while continuing the dropping of an adequate amount of the aqueous solution of the boric acid thereto to bring the treating solution in which the lumps of the silicon oxide are suspended to contact with the substrate surface at 0.2-8cm/min speed to form a silicon oxide film of uneven shape on the substrate surface.</description><subject>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL PROCESSES OF COMPOUNDING</subject><subject>GLASS</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>JOINING GLASS TO GLASS OR OTHER MATERIALS</subject><subject>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</subject><subject>METALLURGY</subject><subject>MINERAL OR SLAG WOOL</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</subject><subject>SURFACE TREATMENT OF GLASS</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><subject>WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAICPJ3CXUO8fT3U_B3Uwj29PF0BjEjPF1cFdw8fXx5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8V0CwmYGhuZmlibmjMTFqAP2lIj0</recordid><startdate>19850911</startdate><enddate>19850911</enddate><creator>HIYOUDOU MASATO</creator><creator>KAWAHARA HIDEO</creator><creator>MISONOO MASAO</creator><creator>NAGAYAMA HIROTSUGU</creator><creator>HONDA HISAO</creator><scope>EVB</scope></search><sort><creationdate>19850911</creationdate><title>PRODUCTION OF SILICON OXIDE FILM</title><author>HIYOUDOU MASATO ; KAWAHARA HIDEO ; MISONOO MASAO ; NAGAYAMA HIROTSUGU ; HONDA HISAO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS60176947A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL PROCESSES OF COMPOUNDING</topic><topic>GLASS</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>JOINING GLASS TO GLASS OR OTHER MATERIALS</topic><topic>MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES</topic><topic>METALLURGY</topic><topic>MINERAL OR SLAG WOOL</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS</topic><topic>SURFACE TREATMENT OF GLASS</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><topic>WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>HIYOUDOU MASATO</creatorcontrib><creatorcontrib>KAWAHARA HIDEO</creatorcontrib><creatorcontrib>MISONOO MASAO</creatorcontrib><creatorcontrib>NAGAYAMA HIROTSUGU</creatorcontrib><creatorcontrib>HONDA HISAO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HIYOUDOU MASATO</au><au>KAWAHARA HIDEO</au><au>MISONOO MASAO</au><au>NAGAYAMA HIROTSUGU</au><au>HONDA HISAO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PRODUCTION OF SILICON OXIDE FILM</title><date>1985-09-11</date><risdate>1985</risdate><abstract>PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about <=2mol/l hudrosilicofluoric acid concentration. An aqueous solution of boric acid is then dropped thereto to supersaturate the silicon oxide, and deposit lumps of the silicon oxide therein. A substrate, e.g. flat glassor plastic sheet, is then dipped in the treating solution while continuing the dropping of an adequate amount of the aqueous solution of the boric acid thereto to bring the treating solution in which the lumps of the silicon oxide are suspended to contact with the substrate surface at 0.2-8cm/min speed to form a silicon oxide film of uneven shape on the substrate surface.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP |
| title | PRODUCTION OF SILICON OXIDE FILM |
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