PRODUCTION OF SILICON OXIDE FILM

PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto...

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Bibliographische Detailangaben
Hauptverfasser:	HIYOUDOU MASATO, KAWAHARA HIDEO, MISONOO MASAO, NAGAYAMA HIROTSUGU, HONDA HISAO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS BASED THEREON DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL PROCESSES OF COMPOUNDING GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES METALLURGY MINERAL OR SLAG WOOL ORGANIC MACROMOLECULAR COMPOUNDS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION THEIR PREPARATION OR CHEMICAL WORKING-UP WORKING-UP
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Beschreibung
Zusammenfassung:	PURPOSE:To form a transparent substrate, having a silicon oxide film of uneven shape formed on the substrate surface, and suitable for substrates in solar cells, by dipping a base material in a saturated aqueous solution of silicon oxide in hydrosilicofluoric acid containing boric acid added thereto under specific conditions. CONSTITUTION:An aqueous solution of hydrosilicofluoric acid in about >=2mol/ lconcentration is saturated with silicon oxide, and the resultant saturated solution is then diluted with water to prepare a treating solution in about