MOS AMPLIFIER CIRCUIT

PURPOSE:To obtain a large gain by preventing the increase in threshold voltage by a substrate effect to use an amplifier MOSFET with a small size. CONSTITUTION:The amplifier MOSFETQ5 is formed at a P-channel well region W1 formed on the substrate N-SUB and a load MOSFETQ6 is formed at a well region...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SAITOU KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!