MOS AMPLIFIER CIRCUIT

PURPOSE:To obtain a large gain by preventing the increase in threshold voltage by a substrate effect to use an amplifier MOSFET with a small size. CONSTITUTION:The amplifier MOSFETQ5 is formed at a P-channel well region W1 formed on the substrate N-SUB and a load MOSFETQ6 is formed at a well region...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	SAITOU KAZUO
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRONIC CIRCUITRY ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE:To obtain a large gain by preventing the increase in threshold voltage by a substrate effect to use an amplifier MOSFET with a small size. CONSTITUTION:The amplifier MOSFETQ5 is formed at a P-channel well region W1 formed on the substrate N-SUB and a load MOSFETQ6 is formed at a well region W2 provided separately. The Q5 is formed at the region W1 provided independently and separated electrically from the well region on which the other MOSFET is formed and the source and the region W1 are connected in common. Then the source of the Q5 and the channel region are brought into equipotential to prevent the increase in threshold voltage due to the substrate effect. Thus, even if the size of the Q5 is decreased to reduce the gate capacitance, the sensitivity of an amplifier circuit is improved.