MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE:To contrive the improvement of element characteristics and reliability by forming the shallow junction of a conductive region and reducing the noise by unnecessitating high-accuracy mask alignment by a method wherein a poly Si film having the same properties as the substrate Si is formed in...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	IKE MASAHIRO, NAGAYAMA HIROSHI, TAKAHASHI SEIICHI, UENISHI KATSUZOU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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