DEVELOPING METHOD FOR POSITIVE RESIST DEPOSITED ON SEMICONDUCTOR SUBSTRATE

PURPOSE:To effectively improve the uniformly of positive resist patterning by a method wherein an exposed semiconductor substrate is washed with pure water while it is being rotatory driven, it is washed with a positive resist developing solution, and after the exposed part has been selectively removed and developed, it is washed twice with pure water at the different number of revolution. CONSTITUTION:Exposed semiconductor substrate 10 is installed on a spinner head part 13, rotatory driven unitl time T1, pure water is dripped from the first nozzle 141, and the dust and the like adhered to the surface are washed away 21. After time T1 has passed, a rotatory driving is performed until time T2, and a cleaning 22 is performed by dripping pure water and a positive resist developing solution from the first and the second nozzles 141 and 142. After the time T2 has passed, the positive resist developing solution only is dripped until the time T3, and the exposed part is removed and a developing process 23 is performed. After the T3 has passed, pure water only is dripped until time T4 and washed. After the time T4 has passed, the number of revolution is increased, pure water is supplied until the time T5, and a washing process 24 is performed. After the T5 has passed, a drying work 25 is performed by increasing the number of revolution.