INSPECTING METHOD OF INSULATOR FILM
PURPOSE:To reject a product having a secular deterioration of insulator thin film in the initial stage after its manufacture and improve the reliability of products by measuring temperature dependency at a prescribed voltage and calculating a temperature coefficient. CONSTITUTION:A thermochuck is se...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | YOSHIDA TOORU ISHIDA TOSHIHARU KOYAMA SHINICHIROU OKINO HIRONOBU TAKAHASHI TETSUYA |
| description | PURPOSE:To reject a product having a secular deterioration of insulator thin film in the initial stage after its manufacture and improve the reliability of products by measuring temperature dependency at a prescribed voltage and calculating a temperature coefficient. CONSTITUTION:A thermochuck is set at a prescribed temperature, and then a polysilicone electrode 3-3' on the insulator film 2 of silicon dioxide is applied with a voltage such a polarity that an electric field is applied forward to a semiconductor element substrate 1 and a voltmeter 7 measures the voltage of the film 2 at a rated current value. The temperature of the thermochuck 4 is varied and reaches to a prescribed temperature, and the voltage of the film 2 is measured similarly. The temperature dependency of the dielectric strength is calculated on the basis of the measured voltages at the respective temperatures. The secular deterioration is larger and larger as the coefficient of the temperature dependency larger and larger, and the secular deterioration is estimated, thereby removing a secular deteriorating product in its initial stage. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JPS60115847A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JPS60115847A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JPS60115847A3</originalsourceid><addsrcrecordid>eNrjZFD29AsOcHUO8fRzV_B1DfHwd1Hwd1MACob6OIb4Bym4efr48jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK-AYDMDQ0NTCxNzR2Ni1AAAaFgjFQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INSPECTING METHOD OF INSULATOR FILM</title><source>esp@cenet</source><creator>YOSHIDA TOORU ; ISHIDA TOSHIHARU ; KOYAMA SHINICHIROU ; OKINO HIRONOBU ; TAKAHASHI TETSUYA</creator><creatorcontrib>YOSHIDA TOORU ; ISHIDA TOSHIHARU ; KOYAMA SHINICHIROU ; OKINO HIRONOBU ; TAKAHASHI TETSUYA</creatorcontrib><description>PURPOSE:To reject a product having a secular deterioration of insulator thin film in the initial stage after its manufacture and improve the reliability of products by measuring temperature dependency at a prescribed voltage and calculating a temperature coefficient. CONSTITUTION:A thermochuck is set at a prescribed temperature, and then a polysilicone electrode 3-3' on the insulator film 2 of silicon dioxide is applied with a voltage such a polarity that an electric field is applied forward to a semiconductor element substrate 1 and a voltmeter 7 measures the voltage of the film 2 at a rated current value. The temperature of the thermochuck 4 is varied and reaches to a prescribed temperature, and the voltage of the film 2 is measured similarly. The temperature dependency of the dielectric strength is calculated on the basis of the measured voltages at the respective temperatures. The secular deterioration is larger and larger as the coefficient of the temperature dependency larger and larger, and the secular deterioration is estimated, thereby removing a secular deteriorating product in its initial stage.</description><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MEASURING ELECTRIC VARIABLES ; MEASURING MAGNETIC VARIABLES ; PHYSICS ; TESTING</subject><creationdate>1985</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850622&DB=EPODOC&CC=JP&NR=S60115847A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19850622&DB=EPODOC&CC=JP&NR=S60115847A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOSHIDA TOORU</creatorcontrib><creatorcontrib>ISHIDA TOSHIHARU</creatorcontrib><creatorcontrib>KOYAMA SHINICHIROU</creatorcontrib><creatorcontrib>OKINO HIRONOBU</creatorcontrib><creatorcontrib>TAKAHASHI TETSUYA</creatorcontrib><title>INSPECTING METHOD OF INSULATOR FILM</title><description>PURPOSE:To reject a product having a secular deterioration of insulator thin film in the initial stage after its manufacture and improve the reliability of products by measuring temperature dependency at a prescribed voltage and calculating a temperature coefficient. CONSTITUTION:A thermochuck is set at a prescribed temperature, and then a polysilicone electrode 3-3' on the insulator film 2 of silicon dioxide is applied with a voltage such a polarity that an electric field is applied forward to a semiconductor element substrate 1 and a voltmeter 7 measures the voltage of the film 2 at a rated current value. The temperature of the thermochuck 4 is varied and reaches to a prescribed temperature, and the voltage of the film 2 is measured similarly. The temperature dependency of the dielectric strength is calculated on the basis of the measured voltages at the respective temperatures. The secular deterioration is larger and larger as the coefficient of the temperature dependency larger and larger, and the secular deterioration is estimated, thereby removing a secular deteriorating product in its initial stage.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MEASURING ELECTRIC VARIABLES</subject><subject>MEASURING MAGNETIC VARIABLES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1985</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD29AsOcHUO8fRzV_B1DfHwd1Hwd1MACob6OIb4Bym4efr48jCwpiXmFKfyQmluBkU31xBnD93Ugvz41OKCxOTUvNSSeK-AYDMDQ0NTCxNzR2Ni1AAAaFgjFQ</recordid><startdate>19850622</startdate><enddate>19850622</enddate><creator>YOSHIDA TOORU</creator><creator>ISHIDA TOSHIHARU</creator><creator>KOYAMA SHINICHIROU</creator><creator>OKINO HIRONOBU</creator><creator>TAKAHASHI TETSUYA</creator><scope>EVB</scope></search><sort><creationdate>19850622</creationdate><title>INSPECTING METHOD OF INSULATOR FILM</title><author>YOSHIDA TOORU ; ISHIDA TOSHIHARU ; KOYAMA SHINICHIROU ; OKINO HIRONOBU ; TAKAHASHI TETSUYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS60115847A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1985</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MEASURING ELECTRIC VARIABLES</topic><topic>MEASURING MAGNETIC VARIABLES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>YOSHIDA TOORU</creatorcontrib><creatorcontrib>ISHIDA TOSHIHARU</creatorcontrib><creatorcontrib>KOYAMA SHINICHIROU</creatorcontrib><creatorcontrib>OKINO HIRONOBU</creatorcontrib><creatorcontrib>TAKAHASHI TETSUYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOSHIDA TOORU</au><au>ISHIDA TOSHIHARU</au><au>KOYAMA SHINICHIROU</au><au>OKINO HIRONOBU</au><au>TAKAHASHI TETSUYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INSPECTING METHOD OF INSULATOR FILM</title><date>1985-06-22</date><risdate>1985</risdate><abstract>PURPOSE:To reject a product having a secular deterioration of insulator thin film in the initial stage after its manufacture and improve the reliability of products by measuring temperature dependency at a prescribed voltage and calculating a temperature coefficient. CONSTITUTION:A thermochuck is set at a prescribed temperature, and then a polysilicone electrode 3-3' on the insulator film 2 of silicon dioxide is applied with a voltage such a polarity that an electric field is applied forward to a semiconductor element substrate 1 and a voltmeter 7 measures the voltage of the film 2 at a rated current value. The temperature of the thermochuck 4 is varied and reaches to a prescribed temperature, and the voltage of the film 2 is measured similarly. The temperature dependency of the dielectric strength is calculated on the basis of the measured voltages at the respective temperatures. The secular deterioration is larger and larger as the coefficient of the temperature dependency larger and larger, and the secular deterioration is estimated, thereby removing a secular deteriorating product in its initial stage.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_JPS60115847A |
| source | esp@cenet |
| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING |
| title | INSPECTING METHOD OF INSULATOR FILM |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-14T23%3A22%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOSHIDA%20TOORU&rft.date=1985-06-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EJPS60115847A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |