PREPARATION OF PARTIAL GRATING
PURPOSE:To obtain the partial grating easily by forming a negative type resist film onto a substrate, coating a grating forming prearranged section with a mask, exposing an exposed resist film, developing the film and removing the resist film of a developing section, and etching the substrate while...
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| creator | TOUNO HIDETAKA YAMAMOTO KAZUHISA FUKUDA YOUJI |
| description | PURPOSE:To obtain the partial grating easily by forming a negative type resist film onto a substrate, coating a grating forming prearranged section with a mask, exposing an exposed resist film, developing the film and removing the resist film of a developing section, and etching the substrate while using the remaining resist film as a mask. CONSTITUTION:The negative type resist film 2 is formed onto the SiO2 substrate 1, and the mask is aligned and the resist film 3 except the grating forming prearranged section is exposed and cured. The resist film 3 is exposed by using an interference exposure method by laser beams or an electron beam exposure method, and developed and gratings 5 are formed only in sections 4 not cured. The substrate is etched while using the remaining gratings 5 as masks, and the gratings 6 are formed to the surface of the substrate 1. Accordingly, the gratings are obtained only in desired sections. |
| format | Patent |
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CONSTITUTION:The negative type resist film 2 is formed onto the SiO2 substrate 1, and the mask is aligned and the resist film 3 except the grating forming prearranged section is exposed and cured. The resist film 3 is exposed by using an interference exposure method by laser beams or an electron beam exposure method, and developed and gratings 5 are formed only in sections 4 not cured. The substrate is etched while using the remaining gratings 5 as masks, and the gratings 6 are formed to the surface of the substrate 1. Accordingly, the gratings are obtained only in desired sections.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1984</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840119&DB=EPODOC&CC=JP&NR=S599920A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840119&DB=EPODOC&CC=JP&NR=S599920A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TOUNO HIDETAKA</creatorcontrib><creatorcontrib>YAMAMOTO KAZUHISA</creatorcontrib><creatorcontrib>FUKUDA YOUJI</creatorcontrib><title>PREPARATION OF PARTIAL GRATING</title><description>PURPOSE:To obtain the partial grating easily by forming a negative type resist film onto a substrate, coating a grating forming prearranged section with a mask, exposing an exposed resist film, developing the film and removing the resist film of a developing section, and etching the substrate while using the remaining resist film as a mask. CONSTITUTION:The negative type resist film 2 is formed onto the SiO2 substrate 1, and the mask is aligned and the resist film 3 except the grating forming prearranged section is exposed and cured. The resist film 3 is exposed by using an interference exposure method by laser beams or an electron beam exposure method, and developed and gratings 5 are formed only in sections 4 not cured. The substrate is etched while using the remaining gratings 5 as masks, and the gratings 6 are formed to the surface of the substrate 1. 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CONSTITUTION:The negative type resist film 2 is formed onto the SiO2 substrate 1, and the mask is aligned and the resist film 3 except the grating forming prearranged section is exposed and cured. The resist film 3 is exposed by using an interference exposure method by laser beams or an electron beam exposure method, and developed and gratings 5 are formed only in sections 4 not cured. The substrate is etched while using the remaining gratings 5 as masks, and the gratings 6 are formed to the surface of the substrate 1. Accordingly, the gratings are obtained only in desired sections.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PREPARATION OF PARTIAL GRATING |
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