PHOTORITHOGRAPHY
PURPOSE:To enhance resolution and film remaining coefficient by conducting exposure and development under the condition that the surface is shielded from the ambient including the oxygen after forming a photo resist film using the photo resist having reduced sensitivity to oxygen and then covering i...
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| creator | NAKAMURA HATSUO KATOU CHIHARU |
| description | PURPOSE:To enhance resolution and film remaining coefficient by conducting exposure and development under the condition that the surface is shielded from the ambient including the oxygen after forming a photo resist film using the photo resist having reduced sensitivity to oxygen and then covering it with a protection film consisting of the resin having small oxygen transmitting coefficient. CONSTITUTION:As a resin for forming a protection film, a poly-vinyl alcohol system resin, for example, can be considered. The polyvinyl alcohol aqueous solution of 5% is applied on the photo resist film 21. A protection film 22 is formed by removing water in the applied film through heat processing. When the surface is exposed to the ultraviolet rays 5 through the photo mask 4, the photo resist film 21 sensed through the protection film 22. The cross-shaded area of the photo resist 21 is brideged and becomes unsoluble part, while the shaded area is not sensed and dissolves to the developer. The protection film 22 is removed by the exclusive remover and the photo resist film 21 is developed by the n-heptane and then rinsed by the butyl acetate. The surface is dried up and the photo resist image 23 can be obtained. |
| format | Patent |
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CONSTITUTION:As a resin for forming a protection film, a poly-vinyl alcohol system resin, for example, can be considered. The polyvinyl alcohol aqueous solution of 5% is applied on the photo resist film 21. A protection film 22 is formed by removing water in the applied film through heat processing. When the surface is exposed to the ultraviolet rays 5 through the photo mask 4, the photo resist film 21 sensed through the protection film 22. The cross-shaded area of the photo resist 21 is brideged and becomes unsoluble part, while the shaded area is not sensed and dissolves to the developer. The protection film 22 is removed by the exclusive remover and the photo resist film 21 is developed by the n-heptane and then rinsed by the butyl acetate. The surface is dried up and the photo resist image 23 can be obtained.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>1984</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840525&DB=EPODOC&CC=JP&NR=S5990927A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840525&DB=EPODOC&CC=JP&NR=S5990927A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAMURA HATSUO</creatorcontrib><creatorcontrib>KATOU CHIHARU</creatorcontrib><title>PHOTORITHOGRAPHY</title><description>PURPOSE:To enhance resolution and film remaining coefficient by conducting exposure and development under the condition that the surface is shielded from the ambient including the oxygen after forming a photo resist film using the photo resist having reduced sensitivity to oxygen and then covering it with a protection film consisting of the resin having small oxygen transmitting coefficient. CONSTITUTION:As a resin for forming a protection film, a poly-vinyl alcohol system resin, for example, can be considered. The polyvinyl alcohol aqueous solution of 5% is applied on the photo resist film 21. A protection film 22 is formed by removing water in the applied film through heat processing. When the surface is exposed to the ultraviolet rays 5 through the photo mask 4, the photo resist film 21 sensed through the protection film 22. The cross-shaded area of the photo resist 21 is brideged and becomes unsoluble part, while the shaded area is not sensed and dissolves to the developer. The protection film 22 is removed by the exclusive remover and the photo resist film 21 is developed by the n-heptane and then rinsed by the butyl acetate. The surface is dried up and the photo resist image 23 can be obtained.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1984</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAI8PAP8Q_yDPHwdw9yDPCI5GFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8V4BwaaWlgaWRuaOxkQoAQD10x3a</recordid><startdate>19840525</startdate><enddate>19840525</enddate><creator>NAKAMURA HATSUO</creator><creator>KATOU CHIHARU</creator><scope>EVB</scope></search><sort><creationdate>19840525</creationdate><title>PHOTORITHOGRAPHY</title><author>NAKAMURA HATSUO ; KATOU CHIHARU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS5990927A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1984</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAMURA HATSUO</creatorcontrib><creatorcontrib>KATOU CHIHARU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAMURA HATSUO</au><au>KATOU CHIHARU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTORITHOGRAPHY</title><date>1984-05-25</date><risdate>1984</risdate><abstract>PURPOSE:To enhance resolution and film remaining coefficient by conducting exposure and development under the condition that the surface is shielded from the ambient including the oxygen after forming a photo resist film using the photo resist having reduced sensitivity to oxygen and then covering it with a protection film consisting of the resin having small oxygen transmitting coefficient. CONSTITUTION:As a resin for forming a protection film, a poly-vinyl alcohol system resin, for example, can be considered. The polyvinyl alcohol aqueous solution of 5% is applied on the photo resist film 21. A protection film 22 is formed by removing water in the applied film through heat processing. When the surface is exposed to the ultraviolet rays 5 through the photo mask 4, the photo resist film 21 sensed through the protection film 22. The cross-shaded area of the photo resist 21 is brideged and becomes unsoluble part, while the shaded area is not sensed and dissolves to the developer. The protection film 22 is removed by the exclusive remover and the photo resist film 21 is developed by the n-heptane and then rinsed by the butyl acetate. The surface is dried up and the photo resist image 23 can be obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | PHOTORITHOGRAPHY |
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