ETCHING METHOD

PURPOSE:To perform superior anisotropic etching with high selectivity at a high etching speed when Si is etched with gaseous NF3, by specifying the pressure and flow rate of gaseous NF3. CONSTITUTION:Si is etched with gaseous NF3 under electric discharge caused between parallel flat platelike electr...

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Bibliographische Detailangaben
Hauptverfasser:	TANIGUCHI ICHIROU, FUJII TSUNEO, OOHACHI TADASHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE:To perform superior anisotropic etching with high selectivity at a high etching speed when Si is etched with gaseous NF3, by specifying the pressure and flow rate of gaseous NF3. CONSTITUTION:Si is etched with gaseous NF3 under electric discharge caused between parallel flat platelike electrodes. At this time, the pressure of gaseous NF3 is regulated to 20-200pa, especially 30-100pa, and the flow rate is regulated to 0.1-0.4sccm/cm , especially 0.15-0.3sccm/cm . The etching may be carried out under one of said conditions. The preferred frequency of high frequency is 0.1-100MHz, and the preferred output is 0.1-1W/cm .