FORMING METHOD FOR MULTILAYER WIRING OF SEMICONDUCTOR DEVICE

PURPOSE:To prevent the defective connection of the connecting section of upper and lower layer wirings by adding a metal M, which reduces Al2O3 while forming MO and M2O3 by itself, into Al of the upper layer wiring. CONSTITUTION:Al2O3 is chemically stable, but can be reduced. An Al alloy containing...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YONEZAWA TOSHIO, KINOSHITA HIROSHI, OKA YOSHITAMI, FURUGUCHI SHIGEO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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