JPS5943102B
PURPOSE:To enhance the power of and the reliability of a solar battery by forming a photoelectric converting active region on a common conductive substrate, forming common lead conductors thereat, forming independently comb-shaped electrode formed on the region as photoelectric converting units and...
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creator | UCHIDA YOSHUKI HARUKI HIROSHI |
description | PURPOSE:To enhance the power of and the reliability of a solar battery by forming a photoelectric converting active region on a common conductive substrate, forming common lead conductors thereat, forming independently comb-shaped electrode formed on the region as photoelectric converting units and selectively connecting only preferable units. CONSTITUTION:An N type layer 2, an i-type layer 4 and a P type layer 4 formed of amorphous Si are sequentially laminated on a large area substrate 1 formed of stainless steel plate as a photoelectric converting active region. Then, a transparent conductive layer 5 is covered on the layer 4 while forming partly a longitudinal space, and a common lead electrode 4 formed of a Ti layer and an Ag layer is covered in contact with the layer 4 in the space. When a plurality of comb-shaped electrodes 6 of the same material as the layer 5 are formed on the layer 5 as a photoelectric converting unit 8, the electrodes 6 are isolated at predetermined interval from the adjacent electrodes 6 and electrodes 7 electrically independently. Thereafter, strip-shaped metallic plates 9 for connecting the respective units 8 are mounted in the solder material 10, and the units 8 having no pin-hole or the like are selected and connected to each other. |
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CONSTITUTION:An N<+> type layer 2, an i-type layer 4 and a P type layer 4 formed of amorphous Si are sequentially laminated on a large area substrate 1 formed of stainless steel plate as a photoelectric converting active region. Then, a transparent conductive layer 5 is covered on the layer 4 while forming partly a longitudinal space, and a common lead electrode 4 formed of a Ti layer and an Ag layer is covered in contact with the layer 4 in the space. When a plurality of comb-shaped electrodes 6 of the same material as the layer 5 are formed on the layer 5 as a photoelectric converting unit 8, the electrodes 6 are isolated at predetermined interval from the adjacent electrodes 6 and electrodes 7 electrically independently. 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CONSTITUTION:An N<+> type layer 2, an i-type layer 4 and a P type layer 4 formed of amorphous Si are sequentially laminated on a large area substrate 1 formed of stainless steel plate as a photoelectric converting active region. Then, a transparent conductive layer 5 is covered on the layer 4 while forming partly a longitudinal space, and a common lead electrode 4 formed of a Ti layer and an Ag layer is covered in contact with the layer 4 in the space. When a plurality of comb-shaped electrodes 6 of the same material as the layer 5 are formed on the layer 5 as a photoelectric converting unit 8, the electrodes 6 are isolated at predetermined interval from the adjacent electrodes 6 and electrodes 7 electrically independently. 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CONSTITUTION:An N<+> type layer 2, an i-type layer 4 and a P type layer 4 formed of amorphous Si are sequentially laminated on a large area substrate 1 formed of stainless steel plate as a photoelectric converting active region. Then, a transparent conductive layer 5 is covered on the layer 4 while forming partly a longitudinal space, and a common lead electrode 4 formed of a Ti layer and an Ag layer is covered in contact with the layer 4 in the space. When a plurality of comb-shaped electrodes 6 of the same material as the layer 5 are formed on the layer 5 as a photoelectric converting unit 8, the electrodes 6 are isolated at predetermined interval from the adjacent electrodes 6 and electrodes 7 electrically independently. Thereafter, strip-shaped metallic plates 9 for connecting the respective units 8 are mounted in the solder material 10, and the units 8 having no pin-hole or the like are selected and connected to each other.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | JPS5943102B |
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