MANUFACTURE OF SEMICONDUCTOR ELEMENT

PURPOSE:To obtain the wafers having a constant threshold voltage by a method wherein, when the photosensitive resin film formed on the surface of a semiconductor wafer is to be removed, a plurality of wafers are brought into a reactor in such a manner that their surface will be headed in one direction in a uniform and paralleled manner, and an oxygen-plasma processing is performed only on one sheet located at the endmost part in the reverse direction. CONSTITUTION:A plurality of wafers 3 are arranged on a wafer pedestal 2, and the photosensitive resin film provided on the surface of each wafer 3 is removed by performing an oxygen-plasma processing. According to this constitution, the wafers 3 are arranged on the pedestal 2 in parallel with each other heading in one direction leaving the prescribed intervals between them, and only one sheet located at the endmost part is headed in the reverse direction, thereby enabling to have the surface facing inward. Accordingly, the threshold voltage, which is the representative characteristics of the semiconductor element using the wafers 3 can be brought to the same degree as that of the other wafers, thereby enabling to reduce the physical damage of the wafer 3.