SEMICONDUCTOR LASER

PURPOSE:To obtain a laser which operates in high efficiency and up to high temperature in a striped semiconductor laser by forming a buried region which hardly becomes ON without forming a channel, thereby extremely reducing the leakage current. CONSTITUTION:A buried region such as an active layer 6...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	UKOU KATSUYUKI, AKIBA SHIGEYUKI, SAKAI KAZUO, MATSUSHIMA HIROICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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