OHMIC ELECTRODE FORMING METHOD IN COMPOUND SEMICONDUCTOR

PURPOSE:To provide ohmic electrode with small contact resistance and high reproductivity, by a method wherein on a compound semiconductor crystal with P as main constituent element is formed a high-melting metal layer at a low temperature, and Au layer is formed on the uppermost layer, and then the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MORI TAKAO, KATOU HIROSHI, CHIBA KATSUAKI, SAITOU KATSUTOSHI, KOBAYASHI MASAMICHI, IMAI KUNINORI, MORI MITSUHIRO, HIRAO MOTONAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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