SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE:To obtain the dark green color light emitting diode of a high luminous efficiency by a method wherein a P-N junction is formed in the Ga1-xAlxP crystal which was grown on a GaP crystal substrate, and the value of the ingredient coefficient x is set at 0.3. CONSTITUTION:An N type Ga1-xAlxP cr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAKAHASHI KOU, KAGAYA SUSUMU, KIYONO YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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