SEMICONDUCTOR LIGHT EMITTING DEVICE

SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE:To obtain the dark green color light emitting diode of a high luminous efficiency by a method wherein a P-N junction is formed in the Ga1-xAlxP crystal which was grown on a GaP crystal substrate, and the value of the ingredient coefficient x is set at 0.3. CONSTITUTION:An N type Ga1-xAlxP cr...

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Hauptverfasser: TAKAHASHI KOU, KAGAYA SUSUMU, KIYONO YASUO
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator TAKAHASHI KOU
KAGAYA SUSUMU
KIYONO YASUO
description PURPOSE:To obtain the dark green color light emitting diode of a high luminous efficiency by a method wherein a P-N junction is formed in the Ga1-xAlxP crystal which was grown on a GaP crystal substrate, and the value of the ingredient coefficient x is set at 0.3. CONSTITUTION:An N type Ga1-xAlxP crystal 3 is grown on an N type crystal substrate 4 using a temperature difference liquid-phase growing method. Ga, At, GaP, S as in N type impurities and the like are used as the melting material for liquid-phase growth. Also, the quantative ratio of Ga and Al in melting material is determined by the value of an ingredient coefficient x. Then, the above is transformed into the melting material containing P type impurities, and P type Ga1-xAlxP crystal 2 is grown. Subsequently, an anodic electrode 1 and a cathodic electrode 5 are adhered.
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CONSTITUTION:An N type Ga1-xAlxP crystal 3 is grown on an N type crystal substrate 4 using a temperature difference liquid-phase growing method. Ga, At, GaP, S as in N type impurities and the like are used as the melting material for liquid-phase growth. Also, the quantative ratio of Ga and Al in melting material is determined by the value of an ingredient coefficient x. Then, the above is transformed into the melting material containing P type impurities, and P type Ga1-xAlxP crystal 2 is grown. 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CONSTITUTION:An N type Ga1-xAlxP crystal 3 is grown on an N type crystal substrate 4 using a temperature difference liquid-phase growing method. Ga, At, GaP, S as in N type impurities and the like are used as the melting material for liquid-phase growth. Also, the quantative ratio of Ga and Al in melting material is determined by the value of an ingredient coefficient x. Then, the above is transformed into the melting material containing P type impurities, and P type Ga1-xAlxP crystal 2 is grown. Subsequently, an anodic electrode 1 and a cathodic electrode 5 are adhered.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR LIGHT EMITTING DEVICE
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