SEMICONDUCTOR LASER AND MANUFACTURE THEREOF

PURPOSE:To improve the yield of a semiconductor laser by manufacturing a BJB (Butt-Jointed Built-in) structure useful as an integrated laser by one crystal growth, thereby simplifying the manufacturing process. CONSTITUTION:After a photoresist used as a mask is removed, undoped InGaAsP active layers...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	UKOU KATSUYUKI, AKIBA SHIGEYUKI, SAKAI KAZUO, MATSUSHIMA HIROICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY
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