MANUFACTURE OF PHOTO-SEMICONDUCTOR DEVICE
PURPOSE:To change a luminous wavelength of an InGaAsP layer easily to the short wavelength side, to increase the degree of freedom on the manufacture of an element and to improve the controllability of the luminous wavelength by chaning the quantity of Sn or Te added to an InGaAsP growth solution. C...
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| creator | OKAZAKI JIROU KUSUKI TOSHIHIRO |
| description | PURPOSE:To change a luminous wavelength of an InGaAsP layer easily to the short wavelength side, to increase the degree of freedom on the manufacture of an element and to improve the controllability of the luminous wavelength by chaning the quantity of Sn or Te added to an InGaAsP growth solution. CONSTITUTION:The device is manufactured by forming an n-InP clad layer 4, an n-InGaAsP active layer 3, a p-InP clad layer 2 and a p-InGaAsP contact layer 1 on an n-InP substrate 5 in th figure, and Sn is further added to an active layer solution, the quantity of Sn therein is 5mg Sn/Ingr or less (corresponding to a normal n-type dope) and which has a wavelength of 1.51mum, and the active layer is grown in an epitaxial manner in the n-InGaAsP layer 3 when an epitaxial wafer for 1.5mum band InGaAsP/an InP light-emitting diode is grown through a liquid phase epitaxial method. A PL luminous wavelength of the n- InGaAsP active layer 3 can be changed up to 1.45mum from 1.51mum because Sn for controlling the luminous wavelength is added. |
| format | Patent |
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CONSTITUTION:The device is manufactured by forming an n-InP clad layer 4, an n-InGaAsP active layer 3, a p-InP clad layer 2 and a p-InGaAsP contact layer 1 on an n-InP substrate 5 in th figure, and Sn is further added to an active layer solution, the quantity of Sn therein is 5mg Sn/Ingr or less (corresponding to a normal n-type dope) and which has a wavelength of 1.51mum, and the active layer is grown in an epitaxial manner in the n-InGaAsP layer 3 when an epitaxial wafer for 1.5mum band InGaAsP/an InP light-emitting diode is grown through a liquid phase epitaxial method. A PL luminous wavelength of the n- InGaAsP active layer 3 can be changed up to 1.45mum from 1.51mum because Sn for controlling the luminous wavelength is added.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>1983</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19831108&DB=EPODOC&CC=JP&NR=S58191428A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19831108&DB=EPODOC&CC=JP&NR=S58191428A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OKAZAKI JIROU</creatorcontrib><creatorcontrib>KUSUKI TOSHIHIRO</creatorcontrib><title>MANUFACTURE OF PHOTO-SEMICONDUCTOR DEVICE</title><description>PURPOSE:To change a luminous wavelength of an InGaAsP layer easily to the short wavelength side, to increase the degree of freedom on the manufacture of an element and to improve the controllability of the luminous wavelength by chaning the quantity of Sn or Te added to an InGaAsP growth solution. CONSTITUTION:The device is manufactured by forming an n-InP clad layer 4, an n-InGaAsP active layer 3, a p-InP clad layer 2 and a p-InGaAsP contact layer 1 on an n-InP substrate 5 in th figure, and Sn is further added to an active layer solution, the quantity of Sn therein is 5mg Sn/Ingr or less (corresponding to a normal n-type dope) and which has a wavelength of 1.51mum, and the active layer is grown in an epitaxial manner in the n-InGaAsP layer 3 when an epitaxial wafer for 1.5mum band InGaAsP/an InP light-emitting diode is grown through a liquid phase epitaxial method. A PL luminous wavelength of the n- InGaAsP active layer 3 can be changed up to 1.45mum from 1.51mum because Sn for controlling the luminous wavelength is added.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1983</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND0dfQLdXN0DgkNclXwd1MI8PAP8dcNdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfFeAcGmFoaWhiZGFo7GxKgBAEpRJOo</recordid><startdate>19831108</startdate><enddate>19831108</enddate><creator>OKAZAKI JIROU</creator><creator>KUSUKI TOSHIHIRO</creator><scope>EVB</scope></search><sort><creationdate>19831108</creationdate><title>MANUFACTURE OF PHOTO-SEMICONDUCTOR DEVICE</title><author>OKAZAKI JIROU ; KUSUKI TOSHIHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS58191428A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1983</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OKAZAKI JIROU</creatorcontrib><creatorcontrib>KUSUKI TOSHIHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OKAZAKI JIROU</au><au>KUSUKI TOSHIHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURE OF PHOTO-SEMICONDUCTOR DEVICE</title><date>1983-11-08</date><risdate>1983</risdate><abstract>PURPOSE:To change a luminous wavelength of an InGaAsP layer easily to the short wavelength side, to increase the degree of freedom on the manufacture of an element and to improve the controllability of the luminous wavelength by chaning the quantity of Sn or Te added to an InGaAsP growth solution. CONSTITUTION:The device is manufactured by forming an n-InP clad layer 4, an n-InGaAsP active layer 3, a p-InP clad layer 2 and a p-InGaAsP contact layer 1 on an n-InP substrate 5 in th figure, and Sn is further added to an active layer solution, the quantity of Sn therein is 5mg Sn/Ingr or less (corresponding to a normal n-type dope) and which has a wavelength of 1.51mum, and the active layer is grown in an epitaxial manner in the n-InGaAsP layer 3 when an epitaxial wafer for 1.5mum band InGaAsP/an InP light-emitting diode is grown through a liquid phase epitaxial method. A PL luminous wavelength of the n- InGaAsP active layer 3 can be changed up to 1.45mum from 1.51mum because Sn for controlling the luminous wavelength is added.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | MANUFACTURE OF PHOTO-SEMICONDUCTOR DEVICE |
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