DISTRIBUTED FEED-BACK TYPE SEMICONDUCTOR LASER
PURPOSE:To obtain the stabilized single wavelength operation and the excellent input characteristics for the titled semiconductor laser by a method wherein a semiconductor, having the forbidden and width wider than that of a light-emitting layer, is uniformly arranged in the thickness heavier than t...
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| creator | AKIBA SHIGEYUKI UKOU KATSUYUKI SAKAI KAZUO MATSUSHIMA HIROICHI |
| description | PURPOSE:To obtain the stabilized single wavelength operation and the excellent input characteristics for the titled semiconductor laser by a method wherein a semiconductor, having the forbidden and width wider than that of a light-emitting layer, is uniformly arranged in the thickness heavier than that of the region on the extended part of the region where light is actually distributed. CONSTITUTION:InP layers 10 and 10a are buried on the extended part of the end parts 11 and 11a of a laser region. The light emitted from the end part 11a is widely spreaded on the InP layer 10a of the length l2 part, reflected from the emission end face 9a of an element, and the light which will be fed back to the laser region is very small. Accordingly, the F-p resonator consisting of the terminals 9 and 9a of the emitted light receives a heavy loss and its oscillation is suppressed. As a result, the single wavelength operation of a DFB laser can be accomplished. On the other hand, as the InP layer 10 is transparent for the outputted light, the input-output characteristics having an excellent linearity can be obtained. |
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CONSTITUTION:InP layers 10 and 10a are buried on the extended part of the end parts 11 and 11a of a laser region. The light emitted from the end part 11a is widely spreaded on the InP layer 10a of the length l2 part, reflected from the emission end face 9a of an element, and the light which will be fed back to the laser region is very small. Accordingly, the F-p resonator consisting of the terminals 9 and 9a of the emitted light receives a heavy loss and its oscillation is suppressed. As a result, the single wavelength operation of a DFB laser can be accomplished. On the other hand, as the InP layer 10 is transparent for the outputted light, the input-output characteristics having an excellent linearity can be obtained.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>1983</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830819&DB=EPODOC&CC=JP&NR=S58140177A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830819&DB=EPODOC&CC=JP&NR=S58140177A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AKIBA SHIGEYUKI</creatorcontrib><creatorcontrib>UKOU KATSUYUKI</creatorcontrib><creatorcontrib>SAKAI KAZUO</creatorcontrib><creatorcontrib>MATSUSHIMA HIROICHI</creatorcontrib><title>DISTRIBUTED FEED-BACK TYPE SEMICONDUCTOR LASER</title><description>PURPOSE:To obtain the stabilized single wavelength operation and the excellent input characteristics for the titled semiconductor laser by a method wherein a semiconductor, having the forbidden and width wider than that of a light-emitting layer, is uniformly arranged in the thickness heavier than that of the region on the extended part of the region where light is actually distributed. CONSTITUTION:InP layers 10 and 10a are buried on the extended part of the end parts 11 and 11a of a laser region. The light emitted from the end part 11a is widely spreaded on the InP layer 10a of the length l2 part, reflected from the emission end face 9a of an element, and the light which will be fed back to the laser region is very small. Accordingly, the F-p resonator consisting of the terminals 9 and 9a of the emitted light receives a heavy loss and its oscillation is suppressed. As a result, the single wavelength operation of a DFB laser can be accomplished. 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CONSTITUTION:InP layers 10 and 10a are buried on the extended part of the end parts 11 and 11a of a laser region. The light emitted from the end part 11a is widely spreaded on the InP layer 10a of the length l2 part, reflected from the emission end face 9a of an element, and the light which will be fed back to the laser region is very small. Accordingly, the F-p resonator consisting of the terminals 9 and 9a of the emitted light receives a heavy loss and its oscillation is suppressed. As a result, the single wavelength operation of a DFB laser can be accomplished. On the other hand, as the InP layer 10 is transparent for the outputted light, the input-output characteristics having an excellent linearity can be obtained.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DEVICES USING STIMULATED EMISSION ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | DISTRIBUTED FEED-BACK TYPE SEMICONDUCTOR LASER |
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