ACTIVE BOOSTING CIRCUIT FOR MOS TYPE INTEGRATED CIRCUIT

PURPOSE:To set bit line potential to high potential, by connecting one of the drain or the source of a depression type TR to one joint of an MOSIC, connecting the other to the first terminal of a capacitor, to raise the potential of the second terminal of the capacitor. CONSTITUTION:One of the drain...

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1. Verfasser: FURUYAMA TOORU
Format: Patent
Sprache:eng
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Zusammenfassung:PURPOSE:To set bit line potential to high potential, by connecting one of the drain or the source of a depression type TR to one joint of an MOSIC, connecting the other to the first terminal of a capacitor, to raise the potential of the second terminal of the capacitor. CONSTITUTION:One of the drain or the source of a depression type MOS transistor 26 is connected to the first terminal of a capacitor 27, and the other is connected to a bit line 30. By gate voltage phiD of the TR26, the potential of the source and a joint 29 of the first terminal of the capacitor 27 is controlled, and voltage phiP is applied to the second terminal of the capacitor. When this active boosting circuit is combined with a sense amplifier, the bit line is held at high potential to obtain an active boosting circuit having a small chip area, simple circuit operation, and small power consumption.