SYNTHESIZING METHOD FOR DIAMOND
PURPOSE:To synthesize granular or filmlike diamond stably by introducing a gaseous mixture of gaseous H2 passed through the inside of microwave nonpolar discharge and hydrocarbon into the surface of a substrate heated to specific temps. and thermally decomposing the hydrocarbon. CONSTITUTION:After a...
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| creator | SATOU YOUICHIROU KAMO MUTSUKAZU SEDAKA NOBUO MATSUMOTO SEIICHIROU |
| description | PURPOSE:To synthesize granular or filmlike diamond stably by introducing a gaseous mixture of gaseous H2 passed through the inside of microwave nonpolar discharge and hydrocarbon into the surface of a substrate heated to specific temps. and thermally decomposing the hydrocarbon. CONSTITUTION:After a reacting system is evacuated to 0.05-400Torr by driving an evacuating device 6, the gaseous H2 in a supply device 2 is passed through the inside of the microwave nonpolar discharge generated from a waveguide 4 by a microwave oscillator 3 to grow H in an excited state or atomic state. The H is mixed with hydrocarbon (e.g.; methane) supplied from a supply device 1 and the mixture is introduced into a reacting chamber 5, where the mixture is supplied onto the surface of a substrate 7 on a susceptor 9 heated to 300- 1,300 deg.C by a resistance heating furnace 9, whereby the hydrocarbon in the excited state is thermally decomposed and diamond is deposited. Thus the control of nucleus forming speed is facilitated and the granular or filmlike diamond is synthesized easily. |
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CONSTITUTION:After a reacting system is evacuated to 0.05-400Torr by driving an evacuating device 6, the gaseous H2 in a supply device 2 is passed through the inside of the microwave nonpolar discharge generated from a waveguide 4 by a microwave oscillator 3 to grow H in an excited state or atomic state. The H is mixed with hydrocarbon (e.g.; methane) supplied from a supply device 1 and the mixture is introduced into a reacting chamber 5, where the mixture is supplied onto the surface of a substrate 7 on a susceptor 9 heated to 300- 1,300 deg.C by a resistance heating furnace 9, whereby the hydrocarbon in the excited state is thermally decomposed and diamond is deposited. Thus the control of nucleus forming speed is facilitated and the granular or filmlike diamond is synthesized easily.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOUNDS THEREOF ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INORGANIC CHEMISTRY ; METALLURGY ; NON-METALLIC ELEMENTS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>1983</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830701&DB=EPODOC&CC=JP&NR=S58110494A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19830701&DB=EPODOC&CC=JP&NR=S58110494A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SATOU YOUICHIROU</creatorcontrib><creatorcontrib>KAMO MUTSUKAZU</creatorcontrib><creatorcontrib>SEDAKA NOBUO</creatorcontrib><creatorcontrib>MATSUMOTO SEIICHIROU</creatorcontrib><title>SYNTHESIZING METHOD FOR DIAMOND</title><description>PURPOSE:To synthesize granular or filmlike diamond stably by introducing a gaseous mixture of gaseous H2 passed through the inside of microwave nonpolar discharge and hydrocarbon into the surface of a substrate heated to specific temps. and thermally decomposing the hydrocarbon. CONSTITUTION:After a reacting system is evacuated to 0.05-400Torr by driving an evacuating device 6, the gaseous H2 in a supply device 2 is passed through the inside of the microwave nonpolar discharge generated from a waveguide 4 by a microwave oscillator 3 to grow H in an excited state or atomic state. The H is mixed with hydrocarbon (e.g.; methane) supplied from a supply device 1 and the mixture is introduced into a reacting chamber 5, where the mixture is supplied onto the surface of a substrate 7 on a susceptor 9 heated to 300- 1,300 deg.C by a resistance heating furnace 9, whereby the hydrocarbon in the excited state is thermally decomposed and diamond is deposited. Thus the control of nucleus forming speed is facilitated and the granular or filmlike diamond is synthesized easily.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOUNDS THEREOF</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INORGANIC CHEMISTRY</subject><subject>METALLURGY</subject><subject>NON-METALLIC ELEMENTS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1983</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPjvQL8XAN9ozy9HNX8HUN8fB3UXDzD1Jw8XT09fdz4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8V4BwaYWhoYGJpYmjsbEqAEA7XAiEQ</recordid><startdate>19830701</startdate><enddate>19830701</enddate><creator>SATOU YOUICHIROU</creator><creator>KAMO MUTSUKAZU</creator><creator>SEDAKA NOBUO</creator><creator>MATSUMOTO SEIICHIROU</creator><scope>EVB</scope></search><sort><creationdate>19830701</creationdate><title>SYNTHESIZING METHOD FOR DIAMOND</title><author>SATOU YOUICHIROU ; KAMO MUTSUKAZU ; SEDAKA NOBUO ; MATSUMOTO SEIICHIROU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JPS58110494A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>1983</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOUNDS THEREOF</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INORGANIC CHEMISTRY</topic><topic>METALLURGY</topic><topic>NON-METALLIC ELEMENTS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SATOU YOUICHIROU</creatorcontrib><creatorcontrib>KAMO MUTSUKAZU</creatorcontrib><creatorcontrib>SEDAKA NOBUO</creatorcontrib><creatorcontrib>MATSUMOTO SEIICHIROU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATOU YOUICHIROU</au><au>KAMO MUTSUKAZU</au><au>SEDAKA NOBUO</au><au>MATSUMOTO SEIICHIROU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYNTHESIZING METHOD FOR DIAMOND</title><date>1983-07-01</date><risdate>1983</risdate><abstract>PURPOSE:To synthesize granular or filmlike diamond stably by introducing a gaseous mixture of gaseous H2 passed through the inside of microwave nonpolar discharge and hydrocarbon into the surface of a substrate heated to specific temps. and thermally decomposing the hydrocarbon. CONSTITUTION:After a reacting system is evacuated to 0.05-400Torr by driving an evacuating device 6, the gaseous H2 in a supply device 2 is passed through the inside of the microwave nonpolar discharge generated from a waveguide 4 by a microwave oscillator 3 to grow H in an excited state or atomic state. The H is mixed with hydrocarbon (e.g.; methane) supplied from a supply device 1 and the mixture is introduced into a reacting chamber 5, where the mixture is supplied onto the surface of a substrate 7 on a susceptor 9 heated to 300- 1,300 deg.C by a resistance heating furnace 9, whereby the hydrocarbon in the excited state is thermally decomposed and diamond is deposited. Thus the control of nucleus forming speed is facilitated and the granular or filmlike diamond is synthesized easily.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SYNTHESIZING METHOD FOR DIAMOND |
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